No. |
Part Name |
Description |
Manufacturer |
1 |
AM-140PIN |
10-200 MHz, high performance amplifier, 29 dB gain |
MA-Com |
2 |
AM-140PIN |
High Performance Amplifier, 29 dB Gain, 10 - 200 MHz |
Tyco Electronics |
3 |
AM-AMC-140 |
High Performance Amplifier, 29 dB Gain, 10 - 200 MHz |
Tyco Electronics |
4 |
AMC-140SMA |
10-200 MHz, high performance amplifier, 29 dB gain |
MA-Com |
5 |
AMC-140SMA |
High Performance Amplifier, 29 dB Gain, 10 - 200 MHz |
Tyco Electronics |
6 |
BGE787B |
750 MHz, 29 dB gain push-pull amplifier |
NXP Semiconductors |
7 |
BUK7Y29-40E |
N-channel 40 V, 29 mΩ standard level MOSFET in LFPAK56 |
Nexperia |
8 |
BUK7Y29-40E |
N-channel 40 V, 29 mΩ standard level MOSFET in LFPAK56 |
NXP Semiconductors |
9 |
BUK9K25-40E |
Dual N-channel 40 V, 29 mΩ logic level MOSFET |
Nexperia |
10 |
BUK9K25-40E |
Dual N-channel 40 V, 29 mΩ logic level MOSFET |
NXP Semiconductors |
11 |
BUK9K29-100E |
Dual N-channel 100 V, 29 mΩ logic level MOSFET |
NXP Semiconductors |
12 |
BUK9Y29-40E |
N-channel 40 V, 29 mΩ logic level MOSFET in LFPAK56 |
Nexperia |
13 |
BUK9Y29-40E |
N-channel 40 V, 29 mΩ logic level MOSFET in LFPAK56 |
NXP Semiconductors |
14 |
CD9011 |
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 29 - 273 hFE |
Continental Device India Limited |
15 |
CD9011D |
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 29 - 44 hFE |
Continental Device India Limited |
16 |
CD9018 |
0.400W General Purpose NPN Plastic Leaded Transistor. 15V Vceo, 0.030A Ic, 29 - 273 hFE |
Continental Device India Limited |
17 |
CD9018D |
0.400W General Purpose NPN Plastic Leaded Transistor. 15V Vceo, 0.030A Ic, 29 - 44 hFE |
Continental Device India Limited |
18 |
CGY1049 |
1 GHz, 29 dB gain GaAs push-pull amplifier |
NXP Semiconductors |
19 |
IRF6714M |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 29 amperes optimized with low on resistance. |
International Rectifier |
20 |
IRF6714MTR1PBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 29 amperes optimized with low on resistance. |
International Rectifier |
21 |
IRF6714MTRPBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 29 amperes optimized with low on resistance. |
International Rectifier |
22 |
IRF6893M |
25V Single N-Channel HEXFET Power MOSFET plus Schottky Diode in a DirectFET MX package rated at 29 amperes optimized with low on resistance. |
International Rectifier |
23 |
IRF6893MTR1PBF |
25V Single N-Channel HEXFET Power MOSFET plus Schottky Diode in a DirectFET MX package rated at 29 amperes optimized with low on resistance. |
International Rectifier |
24 |
IRF6893MTRPBF |
25V Single N-Channel HEXFET Power MOSFET plus Schottky Diode in a DirectFET MX package rated at 29 amperes optimized with low on resistance. |
International Rectifier |
25 |
MHL19936 |
MHL19936 1900-2000 MHz, 12 W, 29 dB RF Linear LDMOS Amplifier |
Motorola |
26 |
MHW7292_D |
MHW7292 750 MHz, 29 dB, 110-Channel CATV Line Extender Amplifier - Archived |
Motorola |
27 |
MHW8292_D |
MHW8292 860 MHz, 29 dB, 128-Channel CATV Line Extender Amplifier - Archived |
Motorola |
28 |
MPX2200A |
0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL) |
Motorola |
29 |
MPX2200AP |
0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL) |
Motorola |
30 |
MPX2200AS |
0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL) |
Motorola |
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