No. |
Part Name |
Description |
Manufacturer |
1 |
2N5460 |
CASE 2904, STYLE 7 TO92 (TO226AA) |
Motorola |
2 |
2N5461 |
CASE 2904, STYLE 7 TO92 (TO226AA) |
Motorola |
3 |
2N5462 |
CASE 2904, STYLE 7 TO92 (TO226AA) |
Motorola |
4 |
2N7002BKT |
60 V, 290 mA N-channel Trench MOSFET |
Nexperia |
5 |
2N7002BKT |
60 V, 290 mA N-channel Trench MOSFET |
NXP Semiconductors |
6 |
ADL5363 |
2300 MHz TO 2900 MHz Balanced Mixer, LO Buffer and RF Balun |
Analog Devices |
7 |
ADRF6704 |
2050 MHz TO 3000 MHz Quadrature Modulator with 2500 MHz TO 2900 MHAPA4800 |
Stereo 290mW 8? Speaker Driver |
ANPEC Electronics Corporation |
9 |
APA4800JI-TR |
Stereo 290mW 8? Speaker Driver |
ANPEC Electronics Corporation |
10 |
APA4800JI-TU |
Stereo 290mW 8? Speaker Driver |
ANPEC Electronics Corporation |
11 |
APA4800KI-TR |
Stereo 290mW 8? Speaker Driver |
ANPEC Electronics Corporation |
12 |
APA4800KI-TU |
Stereo 290mW 8? Speaker Driver |
ANPEC Electronics Corporation |
13 |
BC107B |
NPN transistor for general purpose audio amplifiers, collector-emitter=45V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
14 |
BC108B |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
15 |
BC109B |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
16 |
CGHV35150 |
150W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems |
Wolfspeed |
17 |
CGHV35400F |
400W, 2900 - 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems |
Wolfspeed |
18 |
CSC1684S |
0.400W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 290 - 460 hFE |
Continental Device India Limited |
19 |
CSC1685S |
0.400W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 290 - 460 hFE |
Continental Device India Limited |
20 |
DCR1006_28 |
Thyristor. Vrrm = 2800V, Vrsm = 2900V. D.C. motor control, controlled rectifiers, high power drives. |
USHA India LTD |
21 |
DCR1275_28 |
Thyristor. Vrrm = 2800V, Vrsm = 2900V. D.C. motors control, controlled rectifiers, high power drives. |
USHA India LTD |
22 |
DCR1475_28 |
Thyristor. Vrrm = 2800V, Vrsm = 2900V. D.C. motors control, controlled rectifiers, high power drives. |
USHA India LTD |
23 |
DS1104_29 |
Rectifier diode. All purpose high power rectifier diodes, non-controllable and haft controlled rectifiers. Free-wheeling diodes & welding. Vrrm = 2900V, Vrsm = 3000V. |
USHA India LTD |
24 |
DS2004_28 |
Rectifier diode. All purpose high power rectifier diodes, non-controllable and haft controlled rectifiers. Free-wheeling diodes & traction. Vrrm = 2800V, Vrsm = 2900V. |
USHA India LTD |
25 |
F1772-2000 TO 2901 |
Class X2, AC275V, for Printed Circuit Boards |
Vishay |
26 |
F1773-2000 TO 2901 |
Class X2, AC253V, Axial Leads |
Vishay |
27 |
FDB14N30 |
N-Channel UniFETTM MOSFET 300V, 14A, 290m? |
Fairchild Semiconductor |
28 |
FDPF14N30 |
N-Channel UniFETTM MOSFET 300V, 14A, 290m? |
Fairchild Semiconductor |
29 |
GTVA355001EC-FC-V1 |
High Power RF GaN on SiC HEMTs 500W, 50V, 2900 - 3500 MHz |
Wolfspeed |
30 |
M68710EL |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 290-330MHz, 2W, FM PORTABLE RADIO |
Mitsubishi Electric Corporation |
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