No. |
Part Name |
Description |
Manufacturer |
1 |
1SS97 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
2 |
1SS98 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
3 |
1SS99 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
4 |
2722 162 04051 |
4-PORT CIRCULATORS 2GHZ |
Philips |
5 |
2722 162 04061 |
4-PORT CIRCULATORS 2GHZ |
Philips |
6 |
2722 162 04091 |
4-PORT CIRCULATORS 2GHZ |
Philips |
7 |
2722 162 04101 |
4-PORT CIRCULATORS 2GHZ |
Philips |
8 |
2N5920 |
2W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Microwave Transistor |
RCA Solid State |
9 |
2N5921 |
5W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
10 |
2N6265 |
2W 2GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
11 |
2N6267 |
10W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
12 |
2N6391 |
5W, 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
13 |
2N6392 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
14 |
2N6393 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
15 |
40909 |
2W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
16 |
APPLICATION-NOTE |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 |
NEC |
17 |
BB831 |
Varactordiodes - Silicon variable capacitance diode with frequency range up to 2GHz |
Infineon |
18 |
BCM5324M |
Integrated 24 FE + 2GbE Managed Switch |
Broadcom |
19 |
BFG135A |
RF-Bipolar - For low-distortion broadband amplifier stages up to 2GHz, Power amplifiers in DECT and PCN systems |
Infineon |
20 |
BFG193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
21 |
BFG23 |
Silicon-epitaxial PNP wideband (up to 2GHz) transistor |
Philips |
22 |
BFG32 |
Silicon planar epitaxial PNP wideband (up to 2GHz) transistor |
Philips |
23 |
BFG51 |
Silicon-epitaxial PNP wideband (up to 2GHz) transistor |
Philips |
24 |
BFG65 |
NPN 2GHz wideband transistor |
Philips |
25 |
BFG90A |
Silicon planar epitaxial NPN transistor, designed for wideband application in CATV and MATV systems up to 2GHz |
Philips |
26 |
BFG96 |
Silicon planar epitaxial NPN transistor wideband application up to 2GHz |
Philips |
27 |
BFP193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
28 |
BFP193W |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
29 |
BFP81 |
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.) |
Siemens |
30 |
BFP93 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
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