| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1513-3.5Y |
Delay 3.5 +/-1 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 2 |
1514-3.5Y |
Delay 3.5 +/-1 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 3 |
161X |
Unbased lamp. 3.5V, 0.450A. |
Gilway Technical Lamp |
| 4 |
173-14 |
Midget flanged base lens-end lamp. 3.50V, 0.600A, 12000Lux. |
Gilway Technical Lamp |
| 5 |
179-14 |
Midget flanged base lens-end lamp. 3.50V, 0.750A, 13000Lux. |
Gilway Technical Lamp |
| 6 |
1N6513US |
Diode Switching 2KV 3.5A |
New Jersey Semiconductor |
| 7 |
1N6516 |
Diode Switching 3KV 3.5A 2-Pin |
New Jersey Semiconductor |
| 8 |
2N3902 |
Trans GP BJT NPN 400V 3.5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 9 |
2N4427 |
ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W |
SGS Thomson Microelectronics |
| 10 |
2N5155 |
Trans GP BJT NPN 500V 3.5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 11 |
2N5157 |
Trans GP BJT NPN 500V 3.5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12 |
2N5780 |
Trans GP BJT PNP 65V 3.5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 13 |
2N5781 |
Trans GP BJT PNP 65V 3.5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 14 |
2N5782 |
Trans GP BJT PNP 50V 3.5A 3-Pin TO-5 |
New Jersey Semiconductor |
| 15 |
2N5783 |
Trans GP BJT PNP 40V 3.5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 16 |
2N5784 |
Trans GP BJT NPN 65V 3.5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 17 |
2N5785 |
Trans GP BJT NPN 50V 3.5A 3-Pin TO-5 |
New Jersey Semiconductor |
| 18 |
2N5786 |
Trans GP BJT NPN 40V 3.5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 19 |
2N6782 |
N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. |
General Electric Solid State |
| 20 |
2N6782 |
Trans MOSFET N-CH 100V 3.5A 3-Pin TO-39 |
New Jersey Semiconductor |
| 21 |
2N6782 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 3.5A |
Siliconix |
| 22 |
2N6790 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 3.5A |
Siliconix |
| 23 |
2N7014 |
MOSPOWER N-Channel Enhancement Mode Transistor low gate threshold 100V 3.5A |
Siliconix |
| 24 |
30WQ03FN |
30V 3.5A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
| 25 |
30WQ03FNTR |
30V 3.5A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
| 26 |
30WQ03FNTRL |
30V 3.5A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
| 27 |
30WQ03FNTRR |
30V 3.5A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
| 28 |
30WQ04FN |
40V 3.5A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
| 29 |
30WQ04FNTR |
40V 3.5A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
| 30 |
30WQ04FNTRL |
40V 3.5A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
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