DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for 3.7

Datasheets found :: 60
Page: | 1 | 2 |
No. Part Name Description Manufacturer
1 1N5949 1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-20% tolerance. Jinan Gude Electronic Device
2 1N5949A 1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-10% tolerance. Jinan Gude Electronic Device
3 1N5949C 1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-2% tolerance. Jinan Gude Electronic Device
4 1N5949D 1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-1% tolerance. Jinan Gude Electronic Device
5 3EZ200D 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-20% tolerance. Jinan Gude Electronic Device
6 3EZ200D1 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-1% tolerance. Jinan Gude Electronic Device
7 3EZ200D10 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-10% tolerance. Jinan Gude Electronic Device
8 3EZ200D2 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-2% tolerance. Jinan Gude Electronic Device
9 3EZ200D3 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-3% tolerance. Jinan Gude Electronic Device
10 3EZ200D4 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-4% tolerance. Jinan Gude Electronic Device
11 3LN01C N-Channel Small Signal MOSFET 30V 150mA 3.7 Ohm Single CP ON Semiconductor
12 3LN01S N-Channel Small Signal MOSFET 30V 150mA 3.7 Ohm Single SMCP ON Semiconductor
13 CPH5617 N-Channel Power MOSFET 30V 150mA 3.7 Ohm Dual CPH5 ON Semiconductor
14 EN6546 N-Channel Small Signal MOSFET 30V 150mA 3.7 Ohm Single SSFP ON Semiconductor
15 HMC271LP4 1 dB LSB GaAs MMIC 5-BIT SERIAL CONTROL DIGITAL ATTENUATOR, 0.7 - 3.7 GHz etc
16 HMC271LP4E 1 dB LSB GaAs MMIC 5-BIT SERIAL CONTROL DIGITAL ATTENUATOR, 0.7 - 3.7 GHz etc
17 HMC273MS10G 1 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.7 - 3.7 GHz Hittite Microwave Corporation
18 HMC288MS8 2 dB LSB GaAs MMIC 3-BIT DIGITAL ATTENUATOR, 0.7 - 3.7 GHz Hittite Microwave Corporation
19 MCH6602 N-Channel Power MOSFET, 30V, 0.35A, 3.7 Ohm, Dual MCPH6 ON Semiconductor
20 NTHD3133PF -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET ON Semiconductor
21 NVD5890NL 40 V, 3.7 mOhm, 123 A, Single N−Channel Power MOSFET ON Semiconductor
22 ORT42G5-1BM484C 0.6 to 3.7 Gbps/s XAUI and FC FPSC. Lattice Semiconductor
23 ORT42G5-1BM484I 0.6 to 3.7 Gbps/s XAUI and FC FPSC. Lattice Semiconductor
24 ORT42G5-1BM680C 0.6 to 3.7 Gbps/s XAUI and FC FPSC. Lattice Semiconductor
25 ORT42G5-1BM680I 0.6 to 3.7 Gbps/s XAUI and FC FPSC. Lattice Semiconductor
26 ORT42G5-1BMN484C 0.6 to 3.7 Gbps/s XAUI and FC FPSC. Lattice Semiconductor
27 ORT42G5-1BMN484I 0.6 to 3.7 Gbps/s XAUI and FC FPSC. Lattice Semiconductor
28 ORT42G5-2BM484C 0.6 to 3.7 Gbps/s XAUI and FC FPSC. Lattice Semiconductor
29 ORT42G5-2BM484I 0.6 to 3.7 Gbps/s XAUI and FC FPSC. Lattice Semiconductor
30 ORT42G5-2BM680C 0.6 to 3.7 Gbps/s XAUI and FC FPSC. Lattice Semiconductor


Datasheets found :: 60
Page: | 1 | 2 |



© 2024 - www Datasheet Catalog com