| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5949 |
1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 2 |
1N5949A |
1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 3 |
1N5949C |
1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 4 |
1N5949D |
1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 5 |
3EZ200D |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
| 6 |
3EZ200D1 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
| 7 |
3EZ200D10 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
| 8 |
3EZ200D2 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
| 9 |
3EZ200D3 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
| 10 |
3EZ200D4 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
| 11 |
3LN01C |
N-Channel Small Signal MOSFET 30V 150mA 3.7 Ohm Single CP |
ON Semiconductor |
| 12 |
3LN01S |
N-Channel Small Signal MOSFET 30V 150mA 3.7 Ohm Single SMCP |
ON Semiconductor |
| 13 |
CPH5617 |
N-Channel Power MOSFET 30V 150mA 3.7 Ohm Dual CPH5 |
ON Semiconductor |
| 14 |
EN6546 |
N-Channel Small Signal MOSFET 30V 150mA 3.7 Ohm Single SSFP |
ON Semiconductor |
| 15 |
HMC271LP4 |
1 dB LSB GaAs MMIC 5-BIT SERIAL CONTROL DIGITAL ATTENUATOR, 0.7 - 3.7 GHz |
etc |
| 16 |
HMC271LP4E |
1 dB LSB GaAs MMIC 5-BIT SERIAL CONTROL DIGITAL ATTENUATOR, 0.7 - 3.7 GHz |
etc |
| 17 |
HMC273MS10G |
1 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.7 - 3.7 GHz |
Hittite Microwave Corporation |
| 18 |
HMC288MS8 |
2 dB LSB GaAs MMIC 3-BIT DIGITAL ATTENUATOR, 0.7 - 3.7 GHz |
Hittite Microwave Corporation |
| 19 |
MCH6602 |
N-Channel Power MOSFET, 30V, 0.35A, 3.7 Ohm, Dual MCPH6 |
ON Semiconductor |
| 20 |
NTHD3133PF |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 21 |
NVD5890NL |
40 V, 3.7 mOhm, 123 A, Single N−Channel Power MOSFET |
ON Semiconductor |
| 22 |
ORT42G5-1BM484C |
0.6 to 3.7 Gbps/s XAUI and FC FPSC. |
Lattice Semiconductor |
| 23 |
ORT42G5-1BM484I |
0.6 to 3.7 Gbps/s XAUI and FC FPSC. |
Lattice Semiconductor |
| 24 |
ORT42G5-1BM680C |
0.6 to 3.7 Gbps/s XAUI and FC FPSC. |
Lattice Semiconductor |
| 25 |
ORT42G5-1BM680I |
0.6 to 3.7 Gbps/s XAUI and FC FPSC. |
Lattice Semiconductor |
| 26 |
ORT42G5-1BMN484C |
0.6 to 3.7 Gbps/s XAUI and FC FPSC. |
Lattice Semiconductor |
| 27 |
ORT42G5-1BMN484I |
0.6 to 3.7 Gbps/s XAUI and FC FPSC. |
Lattice Semiconductor |
| 28 |
ORT42G5-2BM484C |
0.6 to 3.7 Gbps/s XAUI and FC FPSC. |
Lattice Semiconductor |
| 29 |
ORT42G5-2BM484I |
0.6 to 3.7 Gbps/s XAUI and FC FPSC. |
Lattice Semiconductor |
| 30 |
ORT42G5-2BM680C |
0.6 to 3.7 Gbps/s XAUI and FC FPSC. |
Lattice Semiconductor |
| | | |
