| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0405-30 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W |
SGS Thomson Microelectronics |
| 2 |
2N5642 |
V(ceo): 35V; V(cb): 65V; V(eb): 4V; 3A; 30W; NPN silicon RF power transistor |
Motorola |
| 3 |
2N5642 |
V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 30W; VHF power transistor |
SGS Thomson Microelectronics |
| 4 |
2N6083 |
NPN silicon RF power transistor 30W - 175MHz |
Motorola |
| 5 |
2N6096 |
PNP silicon RF power transistor 30W 175MHz |
Motorola |
| 6 |
2SB1020 |
7A; 30W; V(ceo): 100V; PNP darlington transistor |
TOSHIBA |
| 7 |
2SB1021 |
7A; 30W; V(ceo): 80V; PNP darlington transistor |
TOSHIBA |
| 8 |
2SB1022 |
7A; 30W; V(ceo): 60V; PNP darlington transistor |
TOSHIBA |
| 9 |
2SC3497 |
6A; 30W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
| 10 |
2SC3559 |
3A; 30W; V(ceo): 800V; NPN transistor. For switching regulation |
TOSHIBA |
| 11 |
2SD1415 |
7A; 30W; V(ceo): 100V; NPN darlington transistor |
TOSHIBA |
| 12 |
2SD1416 |
7A; 30W; V(ceo): 80V; NPN darlington transistor |
TOSHIBA |
| 13 |
2SD1940 |
NPN Epitaxial Planar Silicon Transistor 85V/6A, AF 25 to 30W Output Applications |
SANYO |
| 14 |
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. |
USHA India LTD |
| 15 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
| 16 |
2SK2137 |
V(dss): 600V; V(gss): 30V; I(d): 4A; 30W; switching N-channel power MOSFET. For industrial use |
NEC |
| 17 |
ABC900-30E |
Linear Power Amplifier 30W 890-960MHz, specifically designed for cellular radio base station applications |
Motorola |
| 18 |
ABC900-30U |
Linear Power Amplifier 30W 870-896MHz, specifically designed for cellular radio base station applications |
Motorola |
| 19 |
ABC900-60E |
Linear Power Amplifier 30W 890-960MHz, specifically designed for cellular radio base station applications |
Motorola |
| 20 |
AM0405-030 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W |
SGS Thomson Microelectronics |
| 21 |
AMR900-30 |
Linear Power Amplifier 30W, 800-960MHz, 26Vcc |
Motorola |
| 22 |
AMR900-60A |
Linear Power Amplifier 30W, 800-960MHz, 26Vcc |
Motorola |
| 23 |
AN1439 |
EVAL6565N, 30W AC-DC ADAPTER WITH THE L6565 QUASI-RESONANT PWM CONTROLLER |
SGS Thomson Microelectronics |
| 24 |
ATV7050 |
Linear Power Amplifier 30W, 470-860MHz 25.5V |
Motorola |
| 25 |
BAY96 |
Silicon planar diode for use in high efficiency multiplier circuits, input powers up to 30W |
Mullard |
| 26 |
BD140 |
2A Complementary silicon plastic 30W power PNP transistor 45V |
Motorola |
| 27 |
BD140A |
2A Complementary silicon plastic 30W power PNP transistor 60V |
Motorola |
| 28 |
BD140B |
2A Complementary silicon plastic 30W power PNP transistor 80V |
Motorola |
| 29 |
BD140C |
2A Complementary silicon plastic 30W power PNP transistor 100V |
Motorola |
| 30 |
BD175 |
3A plastic 30W medium power silicon NPN transistor |
Motorola |
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