| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5FMCJ300A |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 285V(min), 315V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 2 |
1.5FMCJ350 |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 315V(min), 385V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 3 |
1.5KE300A |
285- 315V transient voltage suppressor |
DC Components |
| 4 |
1.5KE300A |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 285V(min), 315V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 5 |
1.5KE300CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 285.0 V(min), 315.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 6 |
1.5KE350 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 315V(min), 385V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 7 |
1.5KE350C |
Transient voltage suppressor. 1500 W. Breakdown voltage 315.0 V(min), 385.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 8 |
1N1739 |
Temperature compensated Zener reference diode 31V |
Motorola |
| 9 |
1N1739A |
Temperature compensated Zener reference diode 31V |
Motorola |
| 10 |
1N5146A |
Diode VAR Cap Single 60V 31.4pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 11 |
1N5647 |
Diode TVS Single Uni-Dir 31.6V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 12 |
1N5927 |
1.5 W, silicon zener diode. Zener voltage 12V. Test current 31.2 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 13 |
1N5927A |
1.5 W, silicon zener diode. Zener voltage 12V. Test current 31.2 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 14 |
1N5927C |
1.5 W, silicon zener diode. Zener voltage 12V. Test current 31.2 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 15 |
1N5927D |
1.5 W, silicon zener diode. Zener voltage 12V. Test current 31.2 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 16 |
1N6053 |
Diode TVS Single Bi-Dir 31V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 17 |
1N6285 |
Diode TVS Single Uni-Dir 31.6V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 18 |
2N5237 |
Type 2N5237 Geometry 3111 Polarity NPN |
Semicoa Semiconductor |
| 19 |
2N5238 |
Type 2N5238 Geometry 3111 Polarity NPN |
Semicoa Semiconductor |
| 20 |
2N6439 |
Trans GP BJT NPN 33V 4-Pin Case 316-01 |
New Jersey Semiconductor |
| 21 |
2N7002BKW |
60 V, 310 mA N-channel Trench MOSFET |
Nexperia |
| 22 |
2N7002BKW |
60 V, 310 mA N-channel Trench MOSFET |
NXP Semiconductors |
| 23 |
2N7002E |
Small Signal MOSFET 60V 310mA 2.5 Ohm Single N-Channel SOT-23 |
ON Semiconductor |
| 24 |
2N7002LT1 |
CASE 318-08, STYLE 21 SOT-23 (TO-236AB) |
Motorola |
| 25 |
2N7002PT |
60 V, 310 mA N-channel Trench MOSFET |
Nexperia |
| 26 |
2N7002PT |
60 V, 310 mA N-channel Trench MOSFET |
NXP Semiconductors |
| 27 |
2N7002PW |
60 V, 310 mA N-channel Trench MOSFET |
Nexperia |
| 28 |
2N7002PW |
60 V, 310 mA N-channel Trench MOSFET |
NXP Semiconductors |
| 29 |
3WK163 31 |
Optosensor |
Tesla Elektronicke |
| 30 |
AD7173-8 |
Low Power, 8-/16-Channel, 31.25 kSPS, 24-Bit, Highly Integrated Sigma-Delta ADC |
Analog Devices |
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