No. |
Part Name |
Description |
Manufacturer |
1 |
1004MP |
4 W, 35 V, 960-1215 MHz common base transistor |
GHz Technology |
2 |
1503J-35G |
Max delay 35 ns, Mechanically variable delay line |
Data Delay Devices Inc |
3 |
1N1183 |
50 V, 35 A standard recovery rectifier |
Solid State Devices Inc |
4 |
1N1184 |
100 V, 35 A standard recovery rectifier |
Solid State Devices Inc |
5 |
1N1185 |
150 V, 35 A standard recovery rectifier |
Solid State Devices Inc |
6 |
1N1186 |
200 V, 35 A standard recovery rectifier |
Solid State Devices Inc |
7 |
1N1187 |
300 V, 35 A standard recovery rectifier |
Solid State Devices Inc |
8 |
1N1188 |
400 V, 35 A standard recovery rectifier |
Solid State Devices Inc |
9 |
1N1189 |
500 V, 35 A standard recovery rectifier |
Solid State Devices Inc |
10 |
1N1190 |
600 V, 35 A standard recovery rectifier |
Solid State Devices Inc |
11 |
1N4154 |
500mW 35 Volt Silicon Epitaxial Diode |
Micro Commercial Components |
12 |
1N5391G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V. |
Jinan Gude Electronic Device |
13 |
1N5829 |
25 Amp Schottky Barrier Rectifier 20 to 35 Volts |
Micro Commercial Components |
14 |
1N5830 |
25 Amp Schottky Barrier Rectifier 20 to 35 Volts |
Micro Commercial Components |
15 |
1N5831 |
25 Amp Schottky Barrier Rectifier 20 to 35 Volts |
Micro Commercial Components |
16 |
1X |
Marking for NE68035 part number, 35 NEC (MICRO-X) package, X=LOT CODE |
NEC |
17 |
2N2219 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
18 |
2N2219A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
19 |
2N2896 |
1.800W General Purpose NPN Metal Can Transistor. 90V Vceo, 1.000A Ic, 35 hFE. |
Continental Device India Limited |
20 |
2N3496 |
0.400W General Purpose PNP Metal Can Transistor. 80V Vceo, 0.100A Ic, 35 hFE. |
Continental Device India Limited |
21 |
2N3497 |
0.400W General Purpose PNP Metal Can Transistor. 120V Vceo, 0.100A Ic, 35 hFE. |
Continental Device India Limited |
22 |
2N3499 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 35 hFE. |
Continental Device India Limited |
23 |
2N3501 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 35 hFE. |
Continental Device India Limited |
24 |
2N3870 |
SCRs 35 Ampere RMS, 100V |
Motorola |
25 |
2N3871 |
SCRs 35 Ampere RMS, 200V |
Motorola |
26 |
2N3872 |
SCRs 35 Ampere RMS, 400V |
Motorola |
27 |
2N3873 |
SCRs 35 Ampere RMS, 600V |
Motorola |
28 |
2N5204 |
25 and 35 Amp RMS SCRs |
Knox Semiconductor Inc |
29 |
2N5205 |
25 and 35 Amp RMS SCRs |
Knox Semiconductor Inc |
30 |
2N5206 |
25 and 35 Amp RMS SCRs |
Knox Semiconductor Inc |
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