No. |
Part Name |
Description |
Manufacturer |
1 |
1N5258AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 36 V. Tolerance +-10%. |
Microsemi |
2 |
1N5258BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 36 V. Tolerance +-5%. |
Microsemi |
3 |
1N5258UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 36 V. |
Microsemi |
4 |
1SMB5938A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 36 V. +-10% tolerance. |
Motorola |
5 |
1SMB5938B |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 36 V. +-5% tolerance. |
Motorola |
6 |
5962-9560801NXD |
1024 x 36 Synchronous FIFO Memory |
Texas Instruments |
7 |
5962-9560901NXD |
64 x 36 x 2 Synchronous Bidirectional FIFO Memory with Bus Matching |
Texas Instruments |
8 |
80C154 |
CMOS 0 to 36 MHz Single Chip 8bit Microcontroller |
TEMIC |
9 |
A65H73361 |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output |
AMIC Technology |
10 |
A65H73361 SERIES |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output |
AMIC Technology |
11 |
A65H73361P-5 |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output |
AMIC Technology |
12 |
A65H73361P-6 |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output |
AMIC Technology |
13 |
A65H73361P-7 |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output |
AMIC Technology |
14 |
A65H83181 |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output |
AMIC Technology |
15 |
A65H83181 SERIES |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output |
AMIC Technology |
16 |
A65H83181P-5 |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output |
AMIC Technology |
17 |
A65H83181P-6 |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output |
AMIC Technology |
18 |
A65H83181P-7 |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output |
AMIC Technology |
19 |
A67L7336E-4.5 |
Cycle time:8.5ns;accesstime:4.5ns 128K x 36 LVTTL, pipelined DBA SRAM |
AMIC Technology |
20 |
AD8676 |
Ultra Precision, 36 V, 2.8 nV/√Hz Dual RRO Op Amp |
Analog Devices |
21 |
ADA4004-1 |
1.8 nV/√Hz, 36 V, Precision Single Op Amp |
Analog Devices |
22 |
ADA4004-2 |
1.8nV/√Hz, 36 V Precision Dual Amplifier |
Analog Devices |
23 |
ADA4004-4 |
1.8 nV/√Hz, 36 V Precision Quad Amplifier |
Analog Devices |
24 |
ADG936 |
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT |
Analog Devices |
25 |
ADG936BCP |
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT |
Analog Devices |
26 |
ADG936BCP-500RL7 |
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT |
Analog Devices |
27 |
ADG936BCP-R |
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT |
Analog Devices |
28 |
ADG936BCP-R-500RL7 |
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT |
Analog Devices |
29 |
ADG936BCP-R-REEL |
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT |
Analog Devices |
30 |
ADG936BCP-R-REEL7 |
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT |
Analog Devices |
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