| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1V250 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 390 V @ 1mA DC test current. |
NTE Electronics |
| 2 |
1Z390 |
Silicon diffused type zener diode. Typ zener voltage 390 V. |
Panasonic |
| 3 |
2V250 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 390 V @ 1mA DC test current. |
NTE Electronics |
| 4 |
524V25 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 390 V @ 1mA DC test current. |
NTE Electronics |
| 5 |
ADC14061 |
Self-Calibrating 14-Bit, 2.5 MSPS, 390 mW A/D Converter |
National Semiconductor |
| 6 |
ADC14061CCVT |
Self-Calibrating 14-Bit/ 2.5 MSPS/ 390 mW A/D Converter |
National Semiconductor |
| 7 |
ADC14061EVAL |
Self-Calibrating 14-Bit, 2.5 MSPS, 390 mW A/D Converter [Life-time buy] |
National Semiconductor |
| 8 |
ADC14161 |
Low-Distortion, Self-Calibrating 14-Bit, 2.5 MSPS, 390 mW A/D Converter |
National Semiconductor |
| 9 |
ADC14161CIVT |
Low-Distortion/ Self-Calibrating 14-Bit/ 2.5 MSPS/ 390 mW A/D Converter |
National Semiconductor |
| 10 |
ADC14161EVAL |
Low-Distortion, Self-Calibrating 14-Bit, 2.5 MSPS, 390 mW A/D Converter [Life-time buy] |
National Semiconductor |
| 11 |
ADC16061 |
Self-Calibrating 16-Bit, 2.5 MSPS, 390 mW A/D Converter |
National Semiconductor |
| 12 |
ADC16061CCVT |
Self-Calibrating 16-Bit, 2.5 MSPS, 390 mW A/D Converter |
National Semiconductor |
| 13 |
ADC16061EVAL |
Self-Calibrating 16-Bit, 2.5 MSPS, 390 mW A/D Converter |
National Semiconductor |
| 14 |
CSB1065 |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506 |
Continental Device India Limited |
| 15 |
CSB1065R |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSD1506R |
Continental Device India Limited |
| 16 |
CSB1436 |
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 390 hFE. |
Continental Device India Limited |
| 17 |
CSB1436R |
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 180 - 390 hFE. |
Continental Device India Limited |
| 18 |
CSC4115B |
0.400W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 2.000A Ic, 180 - 390 hFE |
Continental Device India Limited |
| 19 |
CSD1506 |
10.000W Low Frequency NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSB1065 |
Continental Device India Limited |
| 20 |
CSD1506R |
10.000W Low Frequency NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSB1065R |
Continental Device India Limited |
| 21 |
PTVA030121EA-V1 |
High Power RF LDMOS FET 12W, 50V, 390 - 450 MHz |
Wolfspeed |
| 22 |
PTVA035002EV-V1 |
High Power RF LDMOS FET 500W, 50V, 390 - 450 MHz |
Wolfspeed |
| 23 |
STGB18N40LZ |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 24 |
STGB18N40LZ-1 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 25 |
STGB18N40LZT4 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 26 |
STGB20N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ |
ST Microelectronics |
| 27 |
STGD18N40LZ |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 28 |
STGD18N40LZ-1 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 29 |
STGD18N40LZT4 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 30 |
STGD19N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ |
ST Microelectronics |
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