No. |
Part Name |
Description |
Manufacturer |
1 |
2N4898 |
Medium-power PNP silicon power transistor. 4 A, 40 V, 25 W. |
Motorola |
2 |
2N4899 |
Medium-power PNP silicon power transistor. 4 A, 60 V, 25 W. |
Motorola |
3 |
2N4900 |
Medium-power PNP silicon power transistor. 4 A, 80 V, 25 W. |
Motorola |
4 |
2N6071 |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
5 |
2N6071A |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
6 |
2N6071B |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
7 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
8 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
9 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
10 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
11 |
2N6073A |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
12 |
2N6073B |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
13 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
14 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
15 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
16 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
17 |
2N6075A |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
18 |
2N6075B |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
19 |
2N6576 |
15 A N-P-N darlington power transistor. 60 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
20 |
2N6577 |
15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
21 |
2N6578 |
15 A N-P-N darlington power transistor. 120 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
22 |
ADP1614 |
650kHz/1.3 MHz, 4 A, Step-Up,PWM, DC-to-DC Switching Converter |
Analog Devices |
23 |
ADP2114 |
Configurable, Dual 2 A/Single 4 A, Synchronous Step-Down DC-to-DC Regulator |
Analog Devices |
24 |
ADP2164 |
6.5V, 4 A, High Efficiency, Step-Down, DC-to-DC Regulator |
Analog Devices |
25 |
ADP2380 |
20 V, 4 A synchronous Step-Down Regulator with Low-Side Driver |
Analog Devices |
26 |
ADP2384 |
20 V, 4 A, Synchronous Step-Down DC-to-DC Regulator |
Analog Devices |
27 |
ADP3623 |
High Speed, Dual, 4 A MOSFET Driver, inverting A/B input pins, 4.5V < Vin < 18V |
Analog Devices |
28 |
ADP3624 |
High Speed, Dual, 4 A MOSFET Driver, non-inverting A/B input pins, 4.5V < Vin < 18V |
Analog Devices |
29 |
ADP3625 |
High Speed, Dual, 4 A MOSFET Driver, inverting A & non-inverting B input pins, 4.5V < Vin < 18V |
Analog Devices |
30 |
ADP3633 |
High Speed, Dual, 4 A MOSFET Driver, inverting A/B input pins, 9.5V < Vin < 18V |
Analog Devices |
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