No. |
Part Name |
Description |
Manufacturer |
1 |
1403 |
Bulk Metal Foil Technology, 4 Pin Transistor Outline Hermetic Resistor Network, Smallest Available Miniature Hermetically-Sealed Network |
Vishay |
2 |
3SK177 |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 PIN MINI MOLD |
NEC |
3 |
3SK299 |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD |
NEC |
4 |
AMT8310 |
The ANADIGICS AMT8310, packaged in a 4 pin TO-46 lens can, is a 3.3 V integrated photodetector and transimpedance amplifier (TIA) ... |
Anadigics Inc |
5 |
ASM811JEUS-T |
4 V, 4 pin mP supervisor with manual reset |
Alliance Semiconductor |
6 |
ASM811LEUS-T |
4.63 V, 4 pin mP supervisor with manual reset |
Alliance Semiconductor |
7 |
ASM811MEUS-T |
4.38 V, 4 pin mP supervisor with manual reset |
Alliance Semiconductor |
8 |
ASM811REUS-T |
2.63 V, 4 pin mP supervisor with manual reset |
Alliance Semiconductor |
9 |
ASM811SEUS-T |
2.93 V, 4 pin mP supervisor with manual reset |
Alliance Semiconductor |
10 |
ASM811TEUS-T |
3.08 V, 4 pin mP supervisor with manual reset |
Alliance Semiconductor |
11 |
ASM812JEUS-T |
4 V, 4 pin mP supervisor with manual reset |
Alliance Semiconductor |
12 |
ASM812LEUS-T |
4.63 V, 4 pin mP supervisor with manual reset |
Alliance Semiconductor |
13 |
ASM812MEUS-T |
4.38 V, 4 pin mP supervisor with manual reset |
Alliance Semiconductor |
14 |
ASM812REUS-T |
2.63 V, 4 pin mP supervisor with manual reset |
Alliance Semiconductor |
15 |
ASM812SEUS-T |
2.93 V, 4 pin mP supervisor with manual reset |
Alliance Semiconductor |
16 |
ASM812TEUS-T |
3.08 V, 4 pin mP supervisor with manual reset |
Alliance Semiconductor |
17 |
M470L2923BN0-CA2 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
18 |
M470L2923BN0-CA2 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
19 |
M470L2923BN0-CB0 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
20 |
M470L2923BN0-CB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
21 |
M470L2923BN0-CCC |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
22 |
M470L2923BN0-CLA2 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
23 |
M470L2923BN0-CLB0 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
24 |
M470L2923BN0-CLB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
25 |
M470L2923BN0-CLCC |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
26 |
M470L2923BNV0-CA2 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
27 |
M470L2923BNV0-CB0 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
28 |
M470L2923BNV0-CB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
29 |
M470L2923BNV0-CCC |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
30 |
M470L2923BNV0-CLA2 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
| | | |