| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5256A |
30 V, 4.2 mA, zener diode |
Leshan Radio Company |
| 2 |
1N5256C |
30 V, 4.2 mA, zener diode |
Leshan Radio Company |
| 3 |
1N5256D |
30 V, 4.2 mA, zener diode |
Leshan Radio Company |
| 4 |
1N972A |
30 V, 4.2 mA, silicon planar zener diode |
Honey Technology |
| 5 |
1N972B |
30 V, 4.2 mA, silicon planar zener diode |
Honey Technology |
| 6 |
3EZ180D |
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
| 7 |
3EZ180D1 |
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
| 8 |
3EZ180D10 |
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
| 9 |
3EZ180D2 |
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
| 10 |
3EZ180D3 |
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
| 11 |
3EZ180D4 |
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
| 12 |
8482A |
8482A Power Sensor, 100 kHz to 4.2 GHz |
Agilent (Hewlett-Packard) |
| 13 |
8482B |
8482B High-Power Sensor, 100 kHz to 4.2 GHz, 25W |
Agilent (Hewlett-Packard) |
| 14 |
8482H |
8482H Power Sensor, 100 kHz to 4.2 GHz, 3 W |
Agilent (Hewlett-Packard) |
| 15 |
AWT6109 |
The AWT6109 is a 3.5V (3.0 V to 4.2 V) high efficiency, 3 stage amplifier module for Korean Band PCS handsets. |
Anadigics Inc |
| 16 |
BQ24075T |
1.5A USB-Friendly Li-Ion Battery Charger and Power-Path Management IC with 4.2 VBAT |
Texas Instruments |
| 17 |
BQ24075TRGTR |
1.5A USB-Friendly Li-Ion Battery Charger and Power-Path Management IC with 4.2 VBAT 16-QFN -40 to 85 |
Texas Instruments |
| 18 |
BQ24075TRGTT |
1.5A USB-Friendly Li-Ion Battery Charger and Power-Path Management IC with 4.2 VBAT 16-QFN -40 to 85 |
Texas Instruments |
| 19 |
EVALHVLED805 |
HVLED805 based evaluation board: 4.2 W isolated LED driver with primary side current regulation |
ST Microelectronics |
| 20 |
HMC279MS8G |
GaAs MMIC DRIVER AMPLIFIER 2.5 - 4.2 GHz |
Hittite Microwave Corporation |
| 21 |
MMBZ5256B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 30.0 V. Test current 4.2 mA. |
Chenyi Electronics |
| 22 |
MR4-187 |
MR4 reflector lamp assembly. 4.2 volts, 1.05 amps. |
Gilway Technical Lamp |
| 23 |
MR6-187 |
MR6 reflector lamp assembly. 4.2 volts, 1.05 amps. |
Gilway Technical Lamp |
| 24 |
NTMS4N01 |
Power MOSFET 4.2 Amps, 20 Volts |
ON Semiconductor |
| 25 |
NTMS4N01R2 |
Power MOSFET 4.2 Amps, 20 Volts |
ON Semiconductor |
| 26 |
NTMS4N01R2-D |
Power MOSFET 4.2 Amps, 20 Volts N-Channel Enhancement-Mode Single SO-8 Package |
ON Semiconductor |
| 27 |
NVMFS5832NL |
Power MOSFET 40 V, 4.2 mOhm, 120 A, Single N-Channel SO-8FL |
ON Semiconductor |
| 28 |
PBSS304PX |
60 V, 4.2 A PNP low V_CEsat (BISS) transistor |
Nexperia |
| 29 |
PBSS304PX |
60 V, 4.2 A PNP low V_CEsat (BISS) transistor |
NXP Semiconductors |
| 30 |
PBSS4032PX |
30 V, 4.2 A PNP low VCEsat (BISS) transistor |
Nexperia |
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