| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5FMCJ400A |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 380V(min), 420V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 2 |
1.5KE400A |
380- 420V transient voltage suppressor |
DC Components |
| 3 |
1.5KE400A |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 380V(min), 420V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 4 |
1.5KE400CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 380.0 V(min), 420.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 5 |
1N5397G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V. |
Jinan Gude Electronic Device |
| 6 |
2SK4117LS |
Power MOSFET 400V 15A 420mOhm Single N-Channel TO-220FI(LS) |
ON Semiconductor |
| 7 |
AD624SD_883B |
+-18V; 420mW; precision instrumentation amplifier |
Analog Devices |
| 8 |
AP3005 |
2A 420kHz PWM BUCK DC-DC CONVERTER |
Diodes |
| 9 |
BC307C |
1.000W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 420 - 800 hFE |
Continental Device India Limited |
| 10 |
BC309C |
0.350W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 420 - 800 hFE |
Continental Device India Limited |
| 11 |
BC546C |
0.500W General Purpose NPN Plastic Leaded Transistor. 65V Vceo, 0.100A Ic, 420 - 800 hFE |
Continental Device India Limited |
| 12 |
BC549C |
0.625W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.100A Ic, 420 - 800 hFE |
Continental Device India Limited |
| 13 |
BC550C |
0.625W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 420 - 800 hFE |
Continental Device India Limited |
| 14 |
BC557C |
0.500W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 420 - 800 hFE |
Continental Device India Limited |
| 15 |
BC558C |
0.500W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 420 - 800 hFE |
Continental Device India Limited |
| 16 |
BC847C |
0.250W General Purpose NPN SMD Transistor. 45V Vceo, 0.100A Ic, 420 - 800 hFE. Complementary BC857C |
Continental Device India Limited |
| 17 |
BC848C |
0.250W General Purpose NPN SMD Transistor. 30V Vceo, 0.100A Ic, 420 - 800 hFE. Complementary BC858C |
Continental Device India Limited |
| 18 |
BC848C |
hfe min 420 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 250 mW |
Fairchild Semiconductor |
| 19 |
BC849C |
0.250W General Purpose NPN SMD Transistor. 30V Vceo, 0.100A Ic, 420 - 800 hFE. Complementary BC859C |
Continental Device India Limited |
| 20 |
BC850C |
0.250W General Purpose NPN SMD Transistor. 45V Vceo, 0.100A Ic, 420 - 800 hFE. Complementary BC860C |
Continental Device India Limited |
| 21 |
BC857C |
0.250W General Purpose PNP SMD Transistor. 45V Vceo, 0.100A Ic, 420 - 800 hFE. Complementary BC847C |
Continental Device India Limited |
| 22 |
BC858C |
0.250W General Purpose PNP SMD Transistor. 30V Vceo, 0.100A Ic, 420 - 800 hFE. Complementary BC848C |
Continental Device India Limited |
| 23 |
BC858C |
hfe min 420 NF max. 10 dB Transistor polarity PNP Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW |
Fairchild Semiconductor |
| 24 |
BC859C |
0.250W General Purpose PNP SMD Transistor. 30V Vceo, 0.100A Ic, 420 - 800 hFE. Complementary BC849C |
Continental Device India Limited |
| 25 |
BC860C |
0.250W General Purpose PNP SMD Transistor. 45V Vceo, 0.100A Ic, 420 - 800 hFE. Complementary BC850C |
Continental Device India Limited |
| 26 |
BGB420 |
Silicon MMICs - Mirror-Biased BFP 420 in SIEGET 25 Technology, Icmax = 30mA, SOT343 |
Infineon |
| 27 |
BStR15100 |
Thyristor 1500V 4200A |
Siemens |
| 28 |
BStR15110 |
Thyristor 1650V 4200A |
Siemens |
| 29 |
BStR15120 |
Thyristor 1800V 4200A |
Siemens |
| 30 |
BStR1560 |
Thyristor 900V 4200A |
Siemens |
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