No. |
Part Name |
Description |
Manufacturer |
1 |
1N5397G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V. |
Jinan Gude Electronic Device |
2 |
BC307C |
1.000W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 420 - 800 hFE |
Continental Device India Limited |
3 |
BC309C |
0.350W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 420 - 800 hFE |
Continental Device India Limited |
4 |
BC546C |
0.500W General Purpose NPN Plastic Leaded Transistor. 65V Vceo, 0.100A Ic, 420 - 800 hFE |
Continental Device India Limited |
5 |
BC549C |
0.625W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.100A Ic, 420 - 800 hFE |
Continental Device India Limited |
6 |
BC550C |
0.625W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 420 - 800 hFE |
Continental Device India Limited |
7 |
BC557C |
0.500W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 420 - 800 hFE |
Continental Device India Limited |
8 |
BC558C |
0.500W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 420 - 800 hFE |
Continental Device India Limited |
9 |
BC847C |
0.250W General Purpose NPN SMD Transistor. 45V Vceo, 0.100A Ic, 420 - 800 hFE. Complementary BC857C |
Continental Device India Limited |
10 |
BC848C |
0.250W General Purpose NPN SMD Transistor. 30V Vceo, 0.100A Ic, 420 - 800 hFE. Complementary BC858C |
Continental Device India Limited |
11 |
BC848C |
hfe min 420 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 250 mW |
Fairchild Semiconductor |
12 |
BC849C |
0.250W General Purpose NPN SMD Transistor. 30V Vceo, 0.100A Ic, 420 - 800 hFE. Complementary BC859C |
Continental Device India Limited |
13 |
BC850C |
0.250W General Purpose NPN SMD Transistor. 45V Vceo, 0.100A Ic, 420 - 800 hFE. Complementary BC860C |
Continental Device India Limited |
14 |
BC857C |
0.250W General Purpose PNP SMD Transistor. 45V Vceo, 0.100A Ic, 420 - 800 hFE. Complementary BC847C |
Continental Device India Limited |
15 |
BC858C |
0.250W General Purpose PNP SMD Transistor. 30V Vceo, 0.100A Ic, 420 - 800 hFE. Complementary BC848C |
Continental Device India Limited |
16 |
BC858C |
hfe min 420 NF max. 10 dB Transistor polarity PNP Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW |
Fairchild Semiconductor |
17 |
BC859C |
0.250W General Purpose PNP SMD Transistor. 30V Vceo, 0.100A Ic, 420 - 800 hFE. Complementary BC849C |
Continental Device India Limited |
18 |
BC860C |
0.250W General Purpose PNP SMD Transistor. 45V Vceo, 0.100A Ic, 420 - 800 hFE. Complementary BC850C |
Continental Device India Limited |
19 |
BGB420 |
Silicon MMICs - Mirror-Biased BFP 420 in SIEGET 25 Technology, Icmax = 30mA, SOT343 |
Infineon |
20 |
BGY22A |
UHF Power Amplifier Module 420 to 480 MHz frequency range |
Philips |
21 |
KS0678 |
6 BIT 420 CHANNEL TFT-LCD SOURCE DRIVER |
Samsung Electronic |
22 |
P4KE400CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 380 V, Vbr(max) = 420 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
23 |
P6KE400CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 380 V, Vbr(max) = 420 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
24 |
S6C0678 |
6 BIT 420 CHANNEL TFT-LCD SOURCE DRIVER |
Samsung Electronic |
25 |
S6C0679 |
6 BIT 420 CHANNEL RSDS TFT�LCD SOURCE DRIVER |
Samsung Electronic |
26 |
SN6505B |
Low-Noise 1 A, 420 kHz Transformer Driver 6-SOT-23 -55 to 125 |
Texas Instruments |
27 |
SN6505BDBVR |
Low-Noise 1 A, 420 kHz Transformer Driver 6-SOT-23 -55 to 125 |
Texas Instruments |
28 |
SN6505BDBVT |
Low-Noise 1 A, 420 kHz Transformer Driver 6-SOT-23 -55 to 125 |
Texas Instruments |
29 |
UPD160062 |
Source driver for 256 gray scale and 420 output TFT-LCD |
NEC |
30 |
UPD160062N-XXX |
Source driver for 256 gray scale and 420 output TFT-LCD |
NEC |
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