| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4756 |
47.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 2 |
1N4756A |
47.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 3 |
1N5261B |
47.0V 500 mW Zener Diode |
Continental Device India Limited |
| 4 |
1N5651A |
Diode TVS Single Uni-Dir 47.8V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 5 |
1N6125 |
Diode TVS Single Bi-Dir 47.1V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 6 |
1N6125A |
Diode TVS Single Bi-Dir 47.1V 500W 2-Pin |
New Jersey Semiconductor |
| 7 |
1N6161 |
Diode TVS Single Bi-Dir 47.1V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 8 |
1N6161A |
Diode TVS Single Bi-Dir 47.1V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 9 |
1N6161US |
Diode TVS Single Bi-Dir 47.1V 1.5KW 2-Pin SMD |
New Jersey Semiconductor |
| 10 |
1N6289A |
Diode TVS Single Uni-Dir 47.8V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 11 |
1N977 |
47.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 12 |
1N977A |
47.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 13 |
1N977B |
47.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 14 |
CLL5261A |
47.0V Reference Grade 500 mW Mini MELF Zener Diode |
Continental Device India Limited |
| 15 |
CLL5261B |
47.0V Reference Grade 500 mW Mini MELF Zener Diode |
Continental Device India Limited |
| 16 |
CLL977A |
47.0V General Purpose 500 mW Mini MELF Zener Diode |
Continental Device India Limited |
| 17 |
CMBZ5261B |
47.0V 300mW SMD Dual Zener Diode |
Continental Device India Limited |
| 18 |
HDSP-R881 |
HDSP-R881 · 8 x 8 Rich Color General Purpose Dot Matrix Displays 47.8 mm (1.88 inch) Package |
Agilent (Hewlett-Packard) |
| 19 |
HDSP-R883 |
HDSP-R883 · 8 x 8 Rich Color General Purpose Dot Matrix Displays 47.8 mm (1.88 inch) Package |
Agilent (Hewlett-Packard) |
| 20 |
MV1642 |
Silicon Epicap diode, epitaxial passivated tuning diode designed for AFC applications in radio, TV, 47.0pF |
Motorola |
| 21 |
MV2111 |
Voltage-Variable Capacitance Silicon EPICAP Diode, 30 Volts 47.0pF |
Motorola |
| 22 |
NTE5274AK |
50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 47.0V. Zener test current Izt = 270mA. |
NTE Electronics |
| 23 |
P6KE5.0 |
Diode TVS Single Uni-Dir 47.8V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
| 24 |
P6KE5.0A |
Diode TVS Single Uni-Dir 47.8V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
| 25 |
P6KE56A |
Diode TVS Single Uni-Dir 47.8V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
| 26 |
P6KE56CA |
Diode TVS Single Bi-Dir 47.8V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
| 27 |
TLGE1100 |
Toshiba LED lamp. Color green. Peak emission wavelength(typ) @20mA 574 nm. Luminous intensity @20mA 47.6(min), 100(typ) mcd. |
Marktech Optoelectronics |
| 28 |
TLOE1100 |
Toshiba LED lamp. Color orange. Peak emission wavelength(typ) @20mA 612 nm. Luminous intensity @20mA 47.6(min), 180(typ) mcd. |
Marktech Optoelectronics |
| 29 |
TLRE1100 |
Toshiba LED lamp. Color red. Peak emission wavelength(typ) @20mA 644 nm. Luminous intensity @20mA 47.6(min), 100(typ) mcd. |
Marktech Optoelectronics |
| 30 |
TLSE1100 |
Toshiba LED lamp. Color red. Peak emission wavelength(typ) @20mA 623 nm. Luminous intensity @20mA 47.6(min), 180(typ) mcd. |
Marktech Optoelectronics |
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