No. |
Part Name |
Description |
Manufacturer |
1 |
1V300 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 470 V @ 1mA DC test current. |
NTE Electronics |
2 |
2N4427 |
Silicon NPN planar epitaxial transistor for driver stages in 175 MHz and 470 MHz transmitters at 12 V supply voltage |
VALVO |
3 |
2SK3079A |
Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier Applications |
TOSHIBA |
4 |
2V300 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 470 V @ 1mA DC test current. |
NTE Electronics |
5 |
524V30 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 470 V @ 1mA DC test current. |
NTE Electronics |
6 |
BLY37 |
Silicon NPN planar epitaxial transistor for power amplifiers in 470 MHz transmitters at 28 V supply voltage |
VALVO |
7 |
BLY38 |
Silicon NPN planar epitaxial transistor for driver stages in 470 MHz transmitters at 13.8 V supply voltage |
VALVO |
8 |
BLY53 |
Silicon NPN planar epitaxial transistor for power amplifiers in 470 MHz transmitters at 13.8 V supply voltage |
VALVO |
9 |
BLY76 |
Silicon NPN planar epitaxial transistor for driver stages in 470 MHz transmitters at 28 V supply |
VALVO |
10 |
KESRX04 |
260 to 470 MHz ASK Receiver with Power Down |
Zarlink Semiconductor |
11 |
LC503MBG1-06Q |
Blue 6 degrees 5 mm LED lamp with water transparent lens. Wavelength(typ.) 470 nm. Luminous intensity(typ.) 1100 mcd. |
Marktech Optoelectronics |
12 |
LC503MBG1-45Q |
Blue 45 degrees 5 mm LED lamp with water clear lens. Wavelength(typ.) 470 nm. Luminous intensity(typ.) 280 mcd. |
Marktech Optoelectronics |
13 |
LZ2363B |
1/3-type CCD Area Sensors with 470 k Pixels |
SHARP |
14 |
LZ2364BJ |
1/3-type CCD Area Sensors with 470 k Pixels |
SHARP |
15 |
LZ2463A |
1/4-type Color CCD Area Sensor with 470 k Pixels |
SHARP |
16 |
MHW2723 |
UHF POWER AMPLIFIER 5.0W, 380 TO 470 MHZ |
Motorola |
17 |
MKP 1841 |
C-values 470 pF - 6.8 µF, Voltage 160 - 2000 VDC, Low losses, High current and pulse load, PCM 7.5-37.5 |
Vishay |
18 |
MKP 1841 -M |
C-values 470 pF - 4.7 µF, Voltage 250 - 2000 VDC, Low losses, High current and pulse load, Mini version, PCM 7.5-37.5 |
Vishay |
19 |
MKT 1813 |
C-values 470 pF - 22 µF, Voltage 63 - 1000 VDC, Low Profile, AXIAL |
Vishay |
20 |
MRF1570T1 |
MRF1570T1, MRF1570FT1 470 MHz, 70 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFET |
Motorola |
21 |
MRF619 |
25W - 470 MHz - Controlled Q RF Power Transistor NPN Silicon designed for 12.5V |
Motorola |
22 |
MRF620 |
35W - 470 MHz - Controlled Q RF Power Transistor NPN Silicon designed for 12.5V |
Motorola |
23 |
NTE5590 |
Silicon Controlled Rectifier (SCR) 470 Amp |
NTE Electronics |
24 |
NTE5591 |
Silicon Controlled Rectifier (SCR) 470 Amp |
NTE Electronics |
25 |
NTE5592 |
Silicon Controlled Rectifier (SCR) 470 Amp |
NTE Electronics |
26 |
NTE5597 |
Silicon Controlled Rectifier (SCR) 470 Amp |
NTE Electronics |
27 |
PTVA042502EC/FC-V1 |
High Power RF LDMOS FETs 250W, 50V, 470 - 806 MHz |
Wolfspeed |
28 |
PTVA043502EC/FC-V1 |
High Power RF LDMOS FETs 350W, 50V, 470 - 860 MHz |
Wolfspeed |
29 |
PTVA047002EV-V1 |
High Power RF LDMOS FET 700W, 50V, 470 - 806 MHz |
Wolfspeed |
30 |
RFFM6401 |
450 - 470 MHz, 3.3 - 4 V Transmit / Receive Front End Module |
Qorvo |
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