| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N5641 |
V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 15W; VHF power transistor |
SGS Thomson Microelectronics |
| 2 |
2N5642 |
V(ceo): 35V; V(cb): 65V; V(eb): 4V; 3A; 30W; NPN silicon RF power transistor |
Motorola |
| 3 |
2N5642 |
V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 30W; VHF power transistor |
SGS Thomson Microelectronics |
| 4 |
2N5643 |
V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 60W; VHF power transistor |
SGS Thomson Microelectronics |
| 5 |
2N6080 |
V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor |
SGS Thomson Microelectronics |
| 6 |
2N6081 |
V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor |
SGS Thomson Microelectronics |
| 7 |
2N6082 |
V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor |
SGS Thomson Microelectronics |
| 8 |
2N6083 |
V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor |
SGS Thomson Microelectronics |
| 9 |
2N6084 |
V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor |
SGS Thomson Microelectronics |
| 10 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
| 11 |
2SC2652 |
V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications |
TOSHIBA |
| 12 |
2SC838 |
Transistor. FM radio RF amp, mix. conv, osc, IF amp . Collector-base voltage Vcbo = 35V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 30mA. |
USHA India LTD |
| 13 |
2SK2941-ZJ-E1 |
Low voltage 4V drive power MOSFET |
NEC |
| 14 |
2SK2941-ZJ-E1(JM) |
Low voltage 4V drive power MOSFET |
NEC |
| 15 |
2SK2941-ZJ-E2 |
Low voltage 4V drive power MOSFET |
NEC |
| 16 |
2SK2941-ZJ-E2(JM) |
Low voltage 4V drive power MOSFET |
NEC |
| 17 |
2SK2983-ZJ-E1 |
Low voltage 4V drive power MOSFET |
NEC |
| 18 |
2SK2983-ZJ-E1(JM) |
Low voltage 4V drive power MOSFET |
NEC |
| 19 |
2SK2983-ZJ-E2 |
Low voltage 4V drive power MOSFET |
NEC |
| 20 |
2SK2983-ZJ-E2(JM) |
Low voltage 4V drive power MOSFET |
NEC |
| 21 |
2SK2984-ZJ-E1 |
Low voltage 4V drive power MOSFET |
NEC |
| 22 |
2SK2984-ZJ-E1(JM) |
Low voltage 4V drive power MOSFET |
NEC |
| 23 |
2SK2984-ZJ-E2 |
Low voltage 4V drive power MOSFET |
NEC |
| 24 |
2SK2984-ZJ-E2(JM) |
Low voltage 4V drive power MOSFET |
NEC |
| 25 |
BFP640 |
Digital Transistors - NPN SiGe RF Transistor, high gain low noise RF transistor in SOT343 Package, 4V, 50mA |
Infineon |
| 26 |
BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA |
Infineon |
| 27 |
BZX55C 4V3 |
Series Half Watt Zeners |
Fairchild Semiconductor |
| 28 |
BZX55C 4V7 |
Series Half Watt Zeners |
Fairchild Semiconductor |
| 29 |
ENA1120 |
RF Transistor, 4V, 30mA, fT=12.5GHz, NPN Single SSFP |
ON Semiconductor |
| 30 |
HBT134I |
600mA 4V triac |
Hi-Sincerity Microelectronics |
| | | |
