| No. |
Part Name |
Description |
Manufacturer |
| 1 |
10AM20 |
TRANS GP BJT 50V 5.5A 3(55AT) |
New Jersey Semiconductor |
| 2 |
1N416B |
Microwave S-band Mixer; NF=10.3 to 5.5 dB |
Motorola |
| 3 |
1N416C |
Microwave S-band Mixer; NF=10.3 to 5.5 dB |
Motorola |
| 4 |
1N416D |
Microwave S-band Mixer; NF=10.3 to 5.5 dB |
Motorola |
| 5 |
1N416E |
Microwave S-band Mixer; NF=10.3 to 5.5 dB |
Motorola |
| 6 |
1N416F |
Microwave S-band Mixer; NF=10.3 to 5.5 dB |
Motorola |
| 7 |
1N416G |
Microwave S-band Mixer; NF=10.3 to 5.5 dB |
Motorola |
| 8 |
1N5629 |
Diode TVS Single Uni-Dir 5.5V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 9 |
1N5945 |
1.5 W, silicon zener diode. Zener voltage 68 V. Test current 5.5 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 10 |
1N5945A |
1.5 W, silicon zener diode. Zener voltage 68 V. Test current 5.5 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 11 |
1N5945C |
1.5 W, silicon zener diode. Zener voltage 68 V. Test current 5.5 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 12 |
1N5945D |
1.5 W, silicon zener diode. Zener voltage 68 V. Test current 5.5 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 13 |
1N6036 |
Diode TVS Single Bi-Dir 5.5V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 14 |
1N6036B |
Diode TVS Single Bi-Dir 5.5V 15KW 2-Pin DO-13 Bulk |
New Jersey Semiconductor |
| 15 |
1N6267 |
Diode TVS Single Uni-Dir 5.5V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 16 |
1S221 |
Silicon junction zener diode 1W 5.5V |
TOSHIBA |
| 17 |
1S263 |
Silicon junction zener diode 10W 5.5V |
TOSHIBA |
| 18 |
2N6759 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V |
Fairchild Semiconductor |
| 19 |
2N6760 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V |
Fairchild Semiconductor |
| 20 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 21 |
50WQ03FN |
30V 5.5A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
| 22 |
50WQ03FNTR |
30V 5.5A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
| 23 |
50WQ03FNTRL |
30V 5.5A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
| 24 |
50WQ03FNTRR |
30V 5.5A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
| 25 |
50WQ04F |
Diode Schottky 40V 5.5A Automotive 3-Pin(2+Tab) DPAK T/R |
New Jersey Semiconductor |
| 26 |
50WQ04FN |
40V 5.5A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
| 27 |
50WQ04FNTR |
40V 5.5A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
| 28 |
50WQ04FNTRL |
40V 5.5A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
| 29 |
50WQ04FNTRR |
40V 5.5A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
| 30 |
50WQ06FN |
60V 5.5A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
| | | |
