| No. |
Part Name |
Description |
Manufacturer |
| 1 |
3EZ130D |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
| 2 |
3EZ130D1 |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
| 3 |
3EZ130D10 |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
| 4 |
3EZ130D2 |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
| 5 |
3EZ130D3 |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
| 6 |
3EZ130D4 |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
| 7 |
ATR7039 |
Up-conversion Mixer IC from 2.4 GHz to 5.8 GHz |
Atmel |
| 8 |
BUK7K6R2-40E |
Dual N-channel 40 V, 5.8 mΩ standard level MOSFET |
Nexperia |
| 9 |
BUK7K6R2-40E |
Dual N-channel 40 V, 5.8 mΩ standard level MOSFET |
NXP Semiconductors |
| 10 |
BUK9K5R6-30E |
Dual N-channel 30 V, 5.8 mΩ logic level MOSFET |
Nexperia |
| 11 |
CMM1335-AK-00S0 |
1.85 to 1.91 GHz, 5.8 V, 32 dBm PCS/PCN power amplifier |
CELERITEK |
| 12 |
CMM1335-AK-00ST |
1.85 to 1.91 GHz, 5.8 V, 32 dBm PCS/PCN power amplifier |
CELERITEK |
| 13 |
CMM1335-AK-00T0 |
1.85 to 1.91 GHz, 5.8 V, 32 dBm PCS/PCN power amplifier |
CELERITEK |
| 14 |
CMM1335-AK-00TT |
1.85 to 1.91 GHz, 5.8 V, 32 dBm PCS/PCN power amplifier |
CELERITEK |
| 15 |
HMC358MS8G |
MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz |
Hittite Microwave Corporation |
| 16 |
MMSF4N01HD |
TMOS MOSFET 5.8 AMPERES 20 VOLTS |
Motorola |
| 17 |
NDH8436 |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 5.8 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V |
Fairchild Semiconductor |
| 18 |
NSI50350AS |
50 V, 350 mA ± 10%, 5.8 W package, Constant Current Regulator, SMC |
ON Semiconductor |
| 19 |
P05G-J-1.5DHQS |
5.8 GHz Mobile Coaxial Connectors |
Hirose Electric |
| 20 |
P05G-LR-PC |
5.8 GHz Mobile Coaxial Connectors |
Hirose Electric |
| 21 |
P05G-P-1.5DHQS |
5.8 GHz Mobile Coaxial Connectors |
Hirose Electric |
| 22 |
P05G-P-2.5GXC |
5.8 GHz Mobile Coaxial Connectors |
Hirose Electric |
| 23 |
PBSS301NZ |
12 V, 5.8 A NPN low VCEsat (BISS) transistor |
Nexperia |
| 24 |
PBSS301NZ |
12 V, 5.8 A NPN low VCEsat (BISS) transistor |
NXP Semiconductors |
| 25 |
PBSS302NZ |
20 V, 5.8 A NPN low VCEsat (BISS) transistor |
Nexperia |
| 26 |
PBSS302NZ |
20 V, 5.8 A NPN low VCEsat (BISS) transistor |
NXP Semiconductors |
| 27 |
PMV16UN |
20 V, 5.8 A N-channel Trench MOSFET |
Nexperia |
| 28 |
PSMN5R8-30LL |
N-channel DFN3333-8 30 V 5.8 mΩ logic level MOSFET |
NXP Semiconductors |
| 29 |
STL7NM60N |
N-channel 600 V, 0.805 Ohm typ., 5.8 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 5x5 package |
ST Microelectronics |
| 30 |
STU80N4F6 |
N-channel 40 V, 5.8 mOhm typ., 80 A, STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
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