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Datasheets for 500

Datasheets found :: 13714
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 0510-10 20 W, 28 V, 500-1000 MHz, UHF emitter silicon power transistor Acrian
2 0510-10-2 20 W, 28 V, 500-1000 MHz, UHF emitter silicon power transistor Acrian
3 0510-50A 50 W, 28 V, 500-1000 MHz common emitter transistor GHz Technology
4 101 1 W, 28 V, 500-1200 MHz common base transistor GHz Technology
5 101A 1 W, 28 V, 500-1200 MHz common base transistor GHz Technology
6 10SI5 Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 500V IPRS Baneasa
7 10SI5R Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 500V IPRS Baneasa
8 1504-500D Delay 500 +/-25 ns, Fixed dip delay line Td/Tr=5 Data Delay Devices Inc
9 1504-500G Delay 500 +/-25 ns, Fixed dip delay line Td/Tr=5 Data Delay Devices Inc
10 1507-500G Delay 500 +/-25 ns, 10-TAP SIP delay line Td/Tr=5 Data Delay Devices Inc
11 1670G 1670G Standalone Logic Analyzer with 500 MHz Timing/150 MHz State, 136 Channels, 128K Memory Agilent (Hewlett-Packard)
12 1672G 1672G Standalone Logic Analyzer with 500 MHz Timing/150 MHz State, 68 Channels, 128K Memory Agilent (Hewlett-Packard)
13 1673G 1673G Standalone Logic Analyzer with 500 MHz Timing/150 MHz State, 34 Channels, 128K Memory Agilent (Hewlett-Packard)
14 1N100 100 V, 500 mA, gold bonded germanium diode BKC International Electronics
15 1N102 125 V, 500 mA, gold bonded germanium diode BKC International Electronics
16 1N103 12 V, 500 mA, gold bonded germanium diode BKC International Electronics
17 1N104 12 V, 500 mA, gold bonded germanium diode BKC International Electronics
18 1N1064 Standard Rectifier (trr more than 500ns) Microsemi
19 1N1065 Standard Rectifier (trr more than 500ns) Microsemi
20 1N1066 Standard Rectifier (trr more than 500ns) Microsemi
21 1N1067 Standard Rectifier (trr more than 500ns) Microsemi
22 1N1068 Standard Rectifier (trr more than 500ns) Microsemi
23 1N1069 Standard Rectifier (trr more than 500ns) Microsemi
24 1N107 10 V, 500 mA, gold bonded germanium diode BKC International Electronics
25 1N108 50 V, 500 mA, gold bonded germanium diode BKC International Electronics
26 1N111 70 V, 500 mA, gold bonded germanium diode BKC International Electronics
27 1N1119 Diffused Silicon Rectifier 2.5A 500V Texas Instruments
28 1N1119R Diffused Silicon Rectifier 2.5A 500V, reverse polarity Texas Instruments
29 1N112 70 V, 500 mA, gold bonded germanium diode BKC International Electronics
30 1N1124 Standard Rectifier (trr more than 500ns) Microsemi


Datasheets found :: 13714
Page: | 1 | 2 | 3 | 4 | 5 |



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