No. |
Part Name |
Description |
Manufacturer |
1 |
1N6097 |
30V 50A Schottky Discrete Diode in a DO-203AB (DO-5) package |
International Rectifier |
2 |
1N6097 |
Diode Schottky 30V 50A 2-Pin DO-5 |
New Jersey Semiconductor |
3 |
1N6097A |
Diode Schottky 30V 50A 2-Pin DO-5 |
New Jersey Semiconductor |
4 |
1N6098 |
40V 50A Schottky Discrete Diode in a DO-203AB (DO-5) package |
International Rectifier |
5 |
1N6098 |
Diode Schottky 40V 50A 2-Pin DO-5 |
New Jersey Semiconductor |
6 |
1N6098A |
Diode Schottky 40V 50A 2-Pin DO-5 |
New Jersey Semiconductor |
7 |
1N6378 |
18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
8 |
1N6386 |
18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
9 |
1S1643 |
Silicon diffused junction rectifier 50A 150V |
TOSHIBA |
10 |
1S1643R |
Silicon diffused junction rectifier 50A 150V, reverse polarity |
TOSHIBA |
11 |
1S1644 |
Silicon diffused junction rectifier 50A 300V |
TOSHIBA |
12 |
1S1644R |
Silicon diffused junction rectifier 50A 300V, reverse polarity |
TOSHIBA |
13 |
2N5683 |
Trans GP BJT NPN 60V 50A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
14 |
2N5684 |
Trans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
15 |
2N5684 |
Power 50A 80V Discrete PNP |
ON Semiconductor |
16 |
2N5685 |
Trans GP BJT NPN 60V 50A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
17 |
2N5686 |
Trans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
18 |
2N5686 |
Power 50A 80V Discrete NPN |
ON Semiconductor |
19 |
2N5686G |
Trans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray |
New Jersey Semiconductor |
20 |
2N6377 |
Trans GP BJT PNP 80V 50A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
21 |
2N6378 |
Trans GP BJT PNP 100V 50A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
22 |
2N6379 |
Trans GP BJT PNP 120V 50A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
23 |
2N6380 |
High-Power PNP silicon transistor 50A 250W 80V |
Motorola |
24 |
2N6380 |
Trans GP BJT PNP 80V 50A 3-Pin TO-63 |
New Jersey Semiconductor |
25 |
2N6381 |
High-Power PNP silicon transistor 50A 250W 100V |
Motorola |
26 |
2N6382 |
High-Power PNP silicon transistor 50A 250W 120V |
Motorola |
27 |
2N6389 |
Trans GP BJT PNP 80V 50A 3-Pin TO-63 |
New Jersey Semiconductor |
28 |
50LF11 |
Silicon alloy-diffused junction avalanche rectifier 50A 800V |
TOSHIBA |
29 |
50NF11 |
Silicon alloy-diffused junction avalanche rectifier 50A 1000V |
TOSHIBA |
30 |
50PF120 |
1200V 50A Std. Recovery Diode in a DO-5 package |
International Rectifier |
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