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Datasheets for 56

Datasheets found :: 107
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No. Part Name Description Manufacturer
1 15KP150 Glass passivated junction transient voltage suppressor. Vrwm = 150 V. Vbr(min/max) = 167/211.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 268 V @ Ipp = 56 A. Panjit International Inc
2 15KP150C Glass passivated junction transient voltage suppressor. Vrwm = 150 V. Vbr(min/max) = 167/211.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 268 V @ Ipp = 56 A. Panjit International Inc
3 1N5263AUR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 56 V. Tolerance +-10%. Microsemi
4 1N5263BUR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 56 V. Tolerance +-5%. Microsemi
5 1N5263UR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 56 V. Microsemi
6 1N5943 1.5 W, silicon zener diode. Zener voltage 56 V. Test current 6.7 mA. +-20% tolerance. Jinan Gude Electronic Device
7 1N5943A 1.5 W, silicon zener diode. Zener voltage 56 V. Test current 6.7 mA. +-10% tolerance. Jinan Gude Electronic Device
8 1N5943C 1.5 W, silicon zener diode. Zener voltage 56 V. Test current 6.7 mA. +-2% tolerance. Jinan Gude Electronic Device
9 1N5943D 1.5 W, silicon zener diode. Zener voltage 56 V. Test current 6.7 mA. +-1% tolerance. Jinan Gude Electronic Device
10 1SMB5943A 1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 56 V. +-10% tolerance. Motorola
11 1SMB5943B 1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 56 V. +-5% tolerance. Motorola
12 1V035 Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 56 V @ 1mA DC test current. NTE Electronics
13 2V035 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 56 V @ 1mA DC test current. NTE Electronics
14 AD9941 Complete 14-Bit, 56 MSPS Imaging Signal Processor Analog Devices
15 CSB1065 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506 Continental Device India Limited
16 CSB1065N 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSD1506N Continental Device India Limited
17 CSD1506 10.000W Low Frequency NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSB1065 Continental Device India Limited
18 CSD1506N 10.000W Low Frequency NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSB1065N Continental Device India Limited
19 CZRA3056 3.0 watt surface mount zener diode. Nom zener voltage 56 V. Comchip Technology
20 CZRC5370B 5.0 watt surface mount zener diode. Nom zener voltage 56 V. Tolerance +-5 %. Comchip Technology
21 CZRL4758A 1 watt surface mount zener diode. Nom zener voltage 56 V. Tolerance +-5 %. Comchip Technology
22 HUF75333G3 Power dissipation 111 W Transistor polarity N Channel Current Id cont. 56 A Pitch lead 5.45 mm Voltage Vds max 55 V Resistance Rds on 0.016 R Temperature current 25 ?C Temperature power 25 ?C Fairchild Semiconductor
23 LH28F160S3HNS-L10 LH28F160S3HNS-L10 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin SSOP SHARP
24 LH28F160S3HNS-L100 LH28F160S3HNS-L100 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin SSOP SHARP
25 LH28F160S3HNS-L120 LH28F160S3HNS-L120 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin SSOP SHARP
26 LH28F160S3HNS-L13 LH28F160S3HNS-L13 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin SSOP SHARP
27 LH28F160S3HNS-L130 LH28F160S3HNS-L130 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin SSOP SHARP
28 LH28F160S3HNS-L150 LH28F160S3HNS-L150 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin SSOP SHARP
29 LH28F160S3HR-L10 LH28F160S3HR-L10 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin TSOP SHARP
30 LH28F160S3HR-L100 LH28F160S3HR-L100 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin TSOP SHARP


Datasheets found :: 107
Page: | 1 | 2 | 3 | 4 |



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