No. |
Part Name |
Description |
Manufacturer |
1 |
15KP150 |
Glass passivated junction transient voltage suppressor. Vrwm = 150 V. Vbr(min/max) = 167/211.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 268 V @ Ipp = 56 A. |
Panjit International Inc |
2 |
15KP150C |
Glass passivated junction transient voltage suppressor. Vrwm = 150 V. Vbr(min/max) = 167/211.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 268 V @ Ipp = 56 A. |
Panjit International Inc |
3 |
1N5263AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 56 V. Tolerance +-10%. |
Microsemi |
4 |
1N5263BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 56 V. Tolerance +-5%. |
Microsemi |
5 |
1N5263UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 56 V. |
Microsemi |
6 |
1N5943 |
1.5 W, silicon zener diode. Zener voltage 56 V. Test current 6.7 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
7 |
1N5943A |
1.5 W, silicon zener diode. Zener voltage 56 V. Test current 6.7 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
8 |
1N5943C |
1.5 W, silicon zener diode. Zener voltage 56 V. Test current 6.7 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
9 |
1N5943D |
1.5 W, silicon zener diode. Zener voltage 56 V. Test current 6.7 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
10 |
1SMB5943A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 56 V. +-10% tolerance. |
Motorola |
11 |
1SMB5943B |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 56 V. +-5% tolerance. |
Motorola |
12 |
1V035 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 56 V @ 1mA DC test current. |
NTE Electronics |
13 |
2V035 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 56 V @ 1mA DC test current. |
NTE Electronics |
14 |
AD9941 |
Complete 14-Bit, 56 MSPS Imaging Signal Processor |
Analog Devices |
15 |
CSB1065 |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506 |
Continental Device India Limited |
16 |
CSB1065N |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSD1506N |
Continental Device India Limited |
17 |
CSD1506 |
10.000W Low Frequency NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSB1065 |
Continental Device India Limited |
18 |
CSD1506N |
10.000W Low Frequency NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSB1065N |
Continental Device India Limited |
19 |
CZRA3056 |
3.0 watt surface mount zener diode. Nom zener voltage 56 V. |
Comchip Technology |
20 |
CZRC5370B |
5.0 watt surface mount zener diode. Nom zener voltage 56 V. Tolerance +-5 %. |
Comchip Technology |
21 |
CZRL4758A |
1 watt surface mount zener diode. Nom zener voltage 56 V. Tolerance +-5 %. |
Comchip Technology |
22 |
HUF75333G3 |
Power dissipation 111 W Transistor polarity N Channel Current Id cont. 56 A Pitch lead 5.45 mm Voltage Vds max 55 V Resistance Rds on 0.016 R Temperature current 25 ?C Temperature power 25 ?C |
Fairchild Semiconductor |
23 |
LH28F160S3HNS-L10 |
LH28F160S3HNS-L10 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin SSOP |
SHARP |
24 |
LH28F160S3HNS-L100 |
LH28F160S3HNS-L100 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin SSOP |
SHARP |
25 |
LH28F160S3HNS-L120 |
LH28F160S3HNS-L120 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin SSOP |
SHARP |
26 |
LH28F160S3HNS-L13 |
LH28F160S3HNS-L13 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin SSOP |
SHARP |
27 |
LH28F160S3HNS-L130 |
LH28F160S3HNS-L130 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin SSOP |
SHARP |
28 |
LH28F160S3HNS-L150 |
LH28F160S3HNS-L150 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin SSOP |
SHARP |
29 |
LH28F160S3HR-L10 |
LH28F160S3HR-L10 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin TSOP |
SHARP |
30 |
LH28F160S3HR-L100 |
LH28F160S3HR-L100 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin TSOP |
SHARP |
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