No. |
Part Name |
Description |
Manufacturer |
1 |
110IMY15-03-8RG |
15 Watt, input voltage range:50-150V output voltage 5V (3500mA) DC/DC converter |
Power-One |
2 |
1318 |
Single 5V RS232/RS422/AppleTalk DCE Transceiver |
Linear Technology |
3 |
1N5908 |
Diode TVS Single Uni-Dir 5V 1.5KW 2-Pin Case CB-429 Ammo |
New Jersey Semiconductor |
4 |
1N6373 |
Diode TVS Uni-Dir 5V 1.5KW 2-Pin Case 41A-04 |
New Jersey Semiconductor |
5 |
2N3244 |
V(ceo): 40V; V(cbo): 40V; V(ebo): 5V; 1A; PNP silicon general purpose transistor |
Motorola |
6 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
7 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
8 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
9 |
2SA968B |
V(cbo): 200V; V(ceo): 200V; V(ebo): 5V; 1.5A; 25W ; silicon PNP epitaxial type silicon power transistor |
TOSHIBA |
10 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
11 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
12 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
13 |
2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = |
USHA India LTD |
14 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
15 |
2SD227 |
Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA. |
USHA India LTD |
16 |
4702ADA |
QUAD 5V RAIL-TO-RAIL PRECISION OPERATIONAL AMPLIFIER |
Advanced Linear Devices |
17 |
4702BDA |
QUAD 5V RAIL-TO-RAIL PRECISION OPERATIONAL AMPLIFIER |
Advanced Linear Devices |
18 |
4702DA |
QUAD 5V RAIL-TO-RAIL PRECISION OPERATIONAL AMPLIFIER |
Advanced Linear Devices |
19 |
48IMS30-0302-9G |
Dual outputs 5V & 3.3V ; 3.3V & 1.8V |
Power-One |
20 |
48IMS30-0503-9G |
Dual outputs 5V & 3.3V ; 3.3V & 1.8V |
Power-One |
21 |
54LCX16244 |
Low Voltage 16-Bit Buffer/Line Driver with 5V Tolerant Inputs and Outputs |
National Semiconductor |
22 |
54LCX16244W-QML |
Low Voltage 16-Bit Buffer/Line Driver with 5V Tolerant Inputs and Outputs |
National Semiconductor |
23 |
54LCX16373 |
Low Voltage 16-Bit Transparent Latch with 5V Tolerant Inputs and Outputs |
National Semiconductor |
24 |
54LCX16373W-QML |
Low Voltage 16-Bit Transparent Latch with 5V Tolerant Inputs and Outputs |
National Semiconductor |
25 |
54LCX16374 |
Low Voltage 16-Bit D Flip-Flop with 5V Tolerant Intputs and Outputs |
National Semiconductor |
26 |
54LCX16374W-QML |
Low Voltage 16-Bit D Flip-Flop with 5V Tolerant Inputs and Outputs |
National Semiconductor |
27 |
54LCX245 |
Low Voltage Bidirectional Transceiver with 5V Tolerant Inputs and Outputs |
National Semiconductor |
28 |
5962-87539013X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
29 |
5962-8753901LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
30 |
5962-87539053X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
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