| No. |
Part Name |
Description |
Manufacturer |
| 1 |
100JB6L |
V(rrm): 600V; 10A rectifier bridge |
International Rectifier |
| 2 |
10DF6 |
Diode Switching 600V 1A 2-Pin DO-204AL |
New Jersey Semiconductor |
| 3 |
10ELS6 |
HIGH SURGE CAPABILITY 100VOLTS TROUGH 600VOLTS TYPE AVAILABLE |
Nihon |
| 4 |
10PM6AC |
10A Single Phase, Avalanche Controlled Rectifier Bridge 600V |
IPRS Baneasa |
| 5 |
10SI6 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 600V |
IPRS Baneasa |
| 6 |
10SI6R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 600V |
IPRS Baneasa |
| 7 |
12JC11 |
Silicon diffused junction rectifier 600V 12A |
TOSHIBA |
| 8 |
15048-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 600VDC |
NTE Electronics |
| 9 |
150K60 |
Diode Switching 600V 150A 2-Pin DO-8 |
New Jersey Semiconductor |
| 10 |
150K60A |
Diode Switching 600V 150A 2-Pin DO-8 |
New Jersey Semiconductor |
| 11 |
150KR60 |
Diode Switching 600V 150A 2-Pin DO-8 |
New Jersey Semiconductor |
| 12 |
150KR60A |
Diode Switching 600V 150A 2-Pin DO-8 |
New Jersey Semiconductor |
| 13 |
150KS60 |
Diode Switching 600V 150A 2-Pin Case B-42 |
New Jersey Semiconductor |
| 14 |
150KSR60 |
Diode Switching 600V 150A 2-Pin Case B-42 |
New Jersey Semiconductor |
| 15 |
1J2C1 |
Silicon diffused junction rectifier 600V 2A Normal |
TOSHIBA |
| 16 |
1J2Z1 |
Silicon diffused junction rectifier 600V 2A Reverse |
TOSHIBA |
| 17 |
1JZ61 |
Silicon diffused junction rectifier 1A 600V |
TOSHIBA |
| 18 |
1N1190 |
Silicon Diode Rectifier, cathode connected to case, 35A 600V |
Motorola |
| 19 |
1N1190 |
Diode Switching 600V 35A 2-Pin DO-5 |
New Jersey Semiconductor |
| 20 |
1N1190A |
Diode Switching 600V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
| 21 |
1N1190R |
Silicon Diode Rectifier, anode connected to case, 35A 600V |
Motorola |
| 22 |
1N1198 |
Diode 600V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
| 23 |
1N1198A |
Diode 600V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
| 24 |
1N1206 |
Diode Switching 600V 12A 2-Pin DO-4 |
New Jersey Semiconductor |
| 25 |
1N1206A |
Diode Switching 600V 12A 2-Pin DO-4 |
New Jersey Semiconductor |
| 26 |
1N1206AR |
Diode Switching 600V 12A 2-Pin DO-4 |
New Jersey Semiconductor |
| 27 |
1N1206B |
Diode Switching 600V 12A 2-Pin DO-4 |
New Jersey Semiconductor |
| 28 |
1N1616 |
Diode Switching 600V 15A 2-Pin DO-4 |
New Jersey Semiconductor |
| 29 |
1N1616A |
Diode 600V 16A 2-Pin DO-4 |
New Jersey Semiconductor |
| 30 |
1N2160 |
Diode 600V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
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