No. |
Part Name |
Description |
Manufacturer |
1 |
30HFU |
SUPER FAST RECTIFIER DIODE 30 Amp 60ns |
International Rectifier |
2 |
30HFU(R)-100 |
SUPER FAST RECTIFIER DIODE 30 Amp 60ns |
International Rectifier |
3 |
30HFU(R)-200 |
SUPER FAST RECTIFIER DIODE 30 Amp 60ns |
International Rectifier |
4 |
30HFU(R)-300 |
SUPER FAST RECTIFIER DIODE 30 Amp 60ns |
International Rectifier |
5 |
30HFU(R)-400 |
SUPER FAST RECTIFIER DIODE 30 Amp 60ns |
International Rectifier |
6 |
30HFU(R)-500 |
SUPER FAST RECTIFIER DIODE 30 Amp 60ns |
International Rectifier |
7 |
30HFU(R)-600 |
SUPER FAST RECTIFIER DIODE 30 Amp 60ns |
International Rectifier |
8 |
ACT-F128K8N-060F6Q |
High speed 1 Megabit monolithic FLASH. Speed 60ns. |
Aeroflex Circuit Technology |
9 |
ACT-F128K8N-060F7Q |
High speed 1 Megabit monolithic FLASH. Speed 60ns. |
Aeroflex Circuit Technology |
10 |
ACT-F128K8N-060P4Q |
High speed 1 Megabit monolithic FLASH. Speed 60ns. |
Aeroflex Circuit Technology |
11 |
AS4C14400-60JC |
1M-bit � 4 CMOS DRAM fast page mode, single 5V power supply, 60ns |
Alliance Semiconductor |
12 |
AS4C14400-60TC |
1M-bit � 4 CMOS DRAM fast page mode, single 5V power supply, 60ns |
Alliance Semiconductor |
13 |
AS4C14405-60JC |
1M-bit � 4 CMOS DRAM EDO, single 5V power supply, 60ns |
Alliance Semiconductor |
14 |
AS4C14405-60TC |
1M-bit � 4 CMOS DRAM EDO, single 5V power supply, 60ns |
Alliance Semiconductor |
15 |
AS4C256K16E0-60JC |
T(rac): 60ns; V(cc): 4.5 to 5.5V; high speed 256K x 16 CMOS DRAM (EDO) |
Alliance Semiconductor |
16 |
AS4LC256K16E0-60JC |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time |
Alliance Semiconductor |
17 |
AS4LC256K16E0-60TC |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time |
Alliance Semiconductor |
18 |
DS1100LU-60 |
3.3V 5-tap economy timing element (delay line), 60ns |
Dallas Semiconductor |
19 |
DS1100LZ-60 |
3.3V 5-tap economy timing element (delay line), 60ns |
Dallas Semiconductor |
20 |
DS1100M-60 |
5-tap economy timing element (delay line), 60ns |
Dallas Semiconductor |
21 |
DS1100U-60 |
5-tap economy timing element (delay line), 60ns |
Dallas Semiconductor |
22 |
DS1100Z-60 |
5-tap economy timing element (delay line), 60ns |
Dallas Semiconductor |
23 |
GM71C17400CJ-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns |
Hynix Semiconductor |
24 |
GM71C17400CT-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns |
Hynix Semiconductor |
25 |
GM71C17403CJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns |
Hynix Semiconductor |
26 |
GM71C17403CLJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
27 |
GM71C17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
28 |
GM71C17403CT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns |
Hynix Semiconductor |
29 |
GM71C17800CJ-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
30 |
GM71C17800CLT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
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