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Datasheets for 60NS

Datasheets found :: 528
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 30HFU SUPER FAST RECTIFIER DIODE 30 Amp 60ns International Rectifier
2 30HFU(R)-100 SUPER FAST RECTIFIER DIODE 30 Amp 60ns International Rectifier
3 30HFU(R)-200 SUPER FAST RECTIFIER DIODE 30 Amp 60ns International Rectifier
4 30HFU(R)-300 SUPER FAST RECTIFIER DIODE 30 Amp 60ns International Rectifier
5 30HFU(R)-400 SUPER FAST RECTIFIER DIODE 30 Amp 60ns International Rectifier
6 30HFU(R)-500 SUPER FAST RECTIFIER DIODE 30 Amp 60ns International Rectifier
7 30HFU(R)-600 SUPER FAST RECTIFIER DIODE 30 Amp 60ns International Rectifier
8 ACT-F128K8N-060F6Q High speed 1 Megabit monolithic FLASH. Speed 60ns. Aeroflex Circuit Technology
9 ACT-F128K8N-060F7Q High speed 1 Megabit monolithic FLASH. Speed 60ns. Aeroflex Circuit Technology
10 ACT-F128K8N-060P4Q High speed 1 Megabit monolithic FLASH. Speed 60ns. Aeroflex Circuit Technology
11 AS4C14400-60JC 1M-bit � 4 CMOS DRAM fast page mode, single 5V power supply, 60ns Alliance Semiconductor
12 AS4C14400-60TC 1M-bit � 4 CMOS DRAM fast page mode, single 5V power supply, 60ns Alliance Semiconductor
13 AS4C14405-60JC 1M-bit � 4 CMOS DRAM EDO, single 5V power supply, 60ns Alliance Semiconductor
14 AS4C14405-60TC 1M-bit � 4 CMOS DRAM EDO, single 5V power supply, 60ns Alliance Semiconductor
15 AS4C256K16E0-60JC T(rac): 60ns; V(cc): 4.5 to 5.5V; high speed 256K x 16 CMOS DRAM (EDO) Alliance Semiconductor
16 AS4LC256K16E0-60JC 3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time Alliance Semiconductor
17 AS4LC256K16E0-60TC 3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time Alliance Semiconductor
18 DS1100LU-60 3.3V 5-tap economy timing element (delay line), 60ns Dallas Semiconductor
19 DS1100LZ-60 3.3V 5-tap economy timing element (delay line), 60ns Dallas Semiconductor
20 DS1100M-60 5-tap economy timing element (delay line), 60ns Dallas Semiconductor
21 DS1100U-60 5-tap economy timing element (delay line), 60ns Dallas Semiconductor
22 DS1100Z-60 5-tap economy timing element (delay line), 60ns Dallas Semiconductor
23 GM71C17400CJ-6 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns Hynix Semiconductor
24 GM71C17400CT-6 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns Hynix Semiconductor
25 GM71C17403CJ-6 CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns Hynix Semiconductor
26 GM71C17403CLJ-6 CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns, low power Hynix Semiconductor
27 GM71C17403CLT-6 CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns, low power Hynix Semiconductor
28 GM71C17403CT-6 CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns Hynix Semiconductor
29 GM71C17800CJ-6 CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns Hynix Semiconductor
30 GM71C17800CLT-6 CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power Hynix Semiconductor


Datasheets found :: 528
Page: | 1 | 2 | 3 | 4 | 5 |



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