| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15KP130A |
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A. |
Panjit International Inc |
| 2 |
15KP130CA |
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A. |
Panjit International Inc |
| 3 |
1N1757 |
Rectifier Diode 7200V |
Motorola |
| 4 |
1N1758 |
Rectifier Diode 7200V |
Motorola |
| 5 |
1N3151 |
Rectifier Diode 0.1A 7200V |
Motorola |
| 6 |
1N4808 |
Diode VAR Cap Single 72V 27pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 7 |
1N4808B |
Diode VAR Cap Single 72V 27pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 8 |
2722 162 02912 |
VHF Narrow-BAND Circulators/Isolators, frequency range 72 to 73 MHz |
Philips |
| 9 |
2N1800 |
Thyristor SCR 720V 1.6KA 3-Pin TO-83 |
New Jersey Semiconductor |
| 10 |
2N1806 |
V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 11 |
2N690 |
25A silicon controlled rectifier. Vrsom 720V. |
General Electric Solid State |
| 12 |
2SK4089LS |
Power MOSFET 650 V, 12 A, 720 mOhm Single N-Channel TO-220FL(LS) |
ON Semiconductor |
| 13 |
2SK4126 |
Power MOSFET 650 V, 15 A, 720 mOhm Single N-Channel TO-3PB |
ON Semiconductor |
| 14 |
30KPA72 |
Diode TVS Single Uni-Dir 72V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 15 |
30KPA72A |
Diode TVS Single Uni-Dir 72V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 16 |
30KPA72C |
Diode TVS Single Bi-Dir 72V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 17 |
30KPA72CA |
Diode TVS Single Bi-Dir 72V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 18 |
5962-87539013X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 19 |
5962-8753901LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 20 |
5962-87539053X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 21 |
5962-8753905LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 22 |
5962-88670013X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 23 |
5962-8867001LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 24 |
5962-88670053X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 25 |
5962-8867005LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 26 |
5962-88724013X |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 27 |
5962-8872401LA |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 28 |
5962-88724043X |
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 29 |
5962-8872404LA |
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 30 |
5962-89755013X |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| | | |
