| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15KP110 |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A. |
Panjit International Inc |
| 2 |
15KP110C |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A. |
Panjit International Inc |
| 3 |
1N5656A |
Diode TVS Single Uni-Dir 77.8V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 4 |
1N6294A |
Diode TVS Single Uni-Dir 77.8V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 5 |
1N6294B |
Diode TVS Single Bi-Dir 77.8V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 6 |
APT50M50JLC |
POWER MOS VI 500V 77A 0.050 Ohm |
Advanced Power Technology |
| 7 |
APT50M50JVFR |
POWER MOS V 500V 77A 0.050 Ohm |
Advanced Power Technology |
| 8 |
APT50M50JVR |
POWER MOS V 500V 77A 0.050 Ohm |
Advanced Power Technology |
| 9 |
APT50M60L2VFR |
POWER MOS V 500V 77A 0.060 Ohm |
Advanced Power Technology |
| 10 |
APT50M60L2VR |
POWER MOS V 500V 77A 0.060 Ohm |
Advanced Power Technology |
| 11 |
BD232 |
Trans GP BJT NPN 300V 0.5A 3-Pin(3+Tab) Case 77-04 |
New Jersey Semiconductor |
| 12 |
BSP 77 |
Protected Low Side Switch |
Infineon |
| 13 |
BSP 772-T |
Inexpensive High Side Switches |
Infineon |
| 14 |
BTS 7700 G |
200mOhm TrilithIC |
Infineon |
| 15 |
BTS 7710 G |
110mOhm TrilithIC |
Infineon |
| 16 |
BTS 7710 GP |
110mOhm TrilithIC P-Pak |
Infineon |
| 17 |
BTS 7740 G |
210mOhm TrilithIC |
Infineon |
| 18 |
BTS 7741 G |
210mOhm TrilithIC Open Load in Off |
Infineon |
| 19 |
BTS 7750 G |
115mOhm TrilithIC |
Infineon |
| 20 |
BTS 7750 GP |
115mOhm TrilithIC P-Pak |
Infineon |
| 21 |
BTS 7751 G |
115mOhm TrilithIC Open Load in Off |
Infineon |
| 22 |
CASE 77 |
MOUNTING HARDWARE |
Motorola |
| 23 |
CASE 77-03 |
Case Outline Dimensions Motorola POWER databook 1980 |
Motorola |
| 24 |
DM163006 |
This powerful 6.25 MIPS (160 nanosecond instruction execution) yet easy-to-program (only 77 single word instructions) CMOS-based ... |
Microchip |
| 25 |
EB4 |
Dual Readout, Standard and Right Angle Terminals, Selective Gold Plating, Polarization Between Contact Positions, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524, Project 77CH3889) |
Vishay |
| 26 |
EB6 |
Dual Readout, Standard and Right Angle Terminals, Selective Gold Plating, Polarization Between Contact Positions, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524, Project 77CH3889) |
Vishay |
| 27 |
EB8 |
Dual Readout, Selective Gold Plating, Polarization Between Contact Positions, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524, Project 77CH3889) |
Vishay |
| 28 |
EN8590 |
P-Channel Power MOSFET, -100V, -27A, 77mOhm, TO-263-2L |
ON Semiconductor |
| 29 |
ENA1456 |
P-Channel Power MOSFET, -12V, -3.5A, 77mOhm, Dual ECH8 |
ON Semiconductor |
| 30 |
FCH041N60E |
N-Channel SuperFET� II MOSFET 600V, 77A, 41m? |
Fairchild Semiconductor |
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