No. |
Part Name |
Description |
Manufacturer |
1 |
AS29LV400B-80SC |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
2 |
AS29LV400B-80SI |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
3 |
AS29LV400B-80TC |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
4 |
AS29LV400B-80TI |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
5 |
AS29LV400T-80SC |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
6 |
AS29LV400T-80SI |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
7 |
AS29LV400T-80TC |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
8 |
AS29LV400T-80TI |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
9 |
AS29LV800B-80SC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
10 |
AS29LV800B-80SI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
11 |
AS29LV800B-80TC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
12 |
AS29LV800B-80TI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
13 |
AS29LV800T-80SC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
14 |
AS29LV800T-80SI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
15 |
AS29LV800T-80TC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
16 |
AS29LV800T-80TI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
17 |
GM71C18163AJ-8 |
1,048,576 words x 16 bit DRAM, 80ns |
LG Semiconductor |
18 |
GM71C18163AT-8 |
1,048,576 words x 16 bit DRAM, 80ns |
LG Semiconductor |
19 |
GM71CS18163ALJ-8 |
1,048,576 words x 16 bit DRAM, 80ns, low power |
LG Semiconductor |
20 |
GM71CS18163ALT-8 |
1,048,576 words x 16 bit DRAM, 80ns, low power |
LG Semiconductor |
21 |
HM514100DLS-8 |
4,194,304-word x 1-bit dynamic RAM, 80ns |
Hitachi Semiconductor |
22 |
HM514100DS-8 |
4,194,304-word x 1-bit dynamic RAM, 80ns |
Hitachi Semiconductor |
23 |
HM514400AJ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
24 |
HM514400ALJ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
25 |
HM514400ALR-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
26 |
HM514400ALRR-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
27 |
HM514400ALS-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
28 |
HM514400ALT-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
29 |
HM514400ALTT-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
30 |
HM514400ALTZ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
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