| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0801-12 |
Marking for NE080190-12 part number, 90 NEC package |
NEC |
| 2 |
0804-12 |
Marking for NE080490-12 part number, 90 NEC package |
NEC |
| 3 |
08090 |
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
Infineon |
| 4 |
0810-12 |
Marking for NE081090-12 part number, 90 NEC package |
NEC |
| 5 |
1504-90E |
Delay 90 +/-4.5 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 6 |
1505-90A |
Delay 90 +/-5 ns, 5-TAP SIP delay line Td/Tr=3 |
Data Delay Devices Inc |
| 7 |
1513-90Y |
Delay 90 +/-4.5 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 8 |
1514-90Y |
Delay 90 +/-4.5 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 9 |
1515-90A |
Delay 90 +/-4.5 ns, fixed SIP delay line Td/Tr=10 |
Data Delay Devices Inc |
| 10 |
2N3251A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 90 hFE. |
Continental Device India Limited |
| 11 |
2N6315 |
Power NPN silicon transistor. 7.0 A, 60 V, 90 W. |
Motorola |
| 12 |
2N6316 |
Power NPN silicon transistor. 7.0 A, 80 V, 90 W. |
Motorola |
| 13 |
2N6317 |
Power PNP silicon transistor. 7.0 A, 60 V, 90 W. |
Motorola |
| 14 |
2N6318 |
Power PNP silicon transistor. 7.0 A, 80 V, 90 W. |
Motorola |
| 15 |
2N6577 |
15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
| 16 |
2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 |
Isahaya Electronics Corporation |
| 17 |
2SC3581 |
900mW Lead frame NPN transistor, maximum rating: 50V Vceo, 400mA Ic, 90 to 500 hFE. Complementary 2SA1399 |
Isahaya Electronics Corporation |
| 18 |
3032-6017-00 |
800-900 MHz, 3dB, 90 crossover hybrid coupler |
MA-Com |
| 19 |
3032-6018-00 |
890-960 MHz, 3dB, 90 crossover hybrid coupler |
MA-Com |
| 20 |
3032-6019-00 |
1700-1900 MHz, 3dB, 90 crossover hybrid coupler |
MA-Com |
| 21 |
5962-9314001HPA |
5962-9314001HPA · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
| 22 |
5962-9314001HPC |
5962-9314001HPC · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
| 23 |
5962-9314001HXA |
5962-9314001HXA · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
| 24 |
5962-9314001HYA |
5962-9314001HYA · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
| 25 |
5962-9314001HYC |
5962-9314001HYC · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
| 26 |
5962-9314001HZA |
5962-9314001HZA · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
| 27 |
5962-9314001HZC |
5962-9314001HZC · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
| 28 |
8090 |
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz |
Infineon |
| 29 |
87310B |
87310B Coaxial Hybrid Coupler, 90 Degree, 1 GHz to 18 GHz |
Agilent (Hewlett-Packard) |
| 30 |
90CLQ100 |
I(f)(av): 90 Amp; V(rrm): 100V; schottky rectifier |
TOSHIBA |
| | | |
