| No. |
Part Name |
Description |
Manufacturer |
| 1 |
10SI9 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 900V |
IPRS Baneasa |
| 2 |
10SI9R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 900V |
IPRS Baneasa |
| 3 |
1496-3 |
24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz |
SGS Thomson Microelectronics |
| 4 |
1N3173 |
Diode Switching 900V 240A 2-Pin DO-9 |
New Jersey Semiconductor |
| 5 |
1N3272 |
Rectifier Diode 900V 160A |
Motorola |
| 6 |
1N3272 |
Diode 900V 275A 2-Pin DO-9 |
New Jersey Semiconductor |
| 7 |
1N3368 |
Rectifier Diode 900V 3A |
Motorola |
| 8 |
1N3637 |
Rectifier Diode 900V |
Motorola |
| 9 |
1N3672 |
Rectifier Diode 12A 900V |
Motorola |
| 10 |
1N3672A |
Rectifier Diode 12A 900V |
Motorola |
| 11 |
1N3767 |
Diode Switching 900V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
| 12 |
1N3989 |
6A 900V Rectifier Diode |
Motorola |
| 13 |
1N4014 |
Rectifier Diode 900V 12A |
Motorola |
| 14 |
1N4055 |
Rectifier Diode 900V |
Motorola |
| 15 |
1N4055 |
Diode 900V 275A 2-Pin DO-9 |
New Jersey Semiconductor |
| 16 |
1N4361 |
Rectifier Diode 0.5A 900V |
Motorola |
| 17 |
1N855 |
Rectifier Diode 900V |
Motorola |
| 18 |
1N866 |
Rectifier Diode 900V |
Motorola |
| 19 |
1N877 |
Rectifier Diode 900V |
Motorola |
| 20 |
1N888 |
Rectifier Diode 900V |
Motorola |
| 21 |
2020-900 |
Delay 900 +/-18 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 22 |
2322 640 90004/98004 |
NTC Thermistors, Molded Range |
Vishay |
| 23 |
2322 640 90042 |
NTC Thermistors, Steel Capped Sensors |
Vishay |
| 24 |
2322 640 90059 |
NTC Thermistors, Long Insulated Leads |
Vishay |
| 25 |
2322 645 90028 |
NTC Thermistors, Long Non-Insulated Leads |
Vishay |
| 26 |
2322 691 90001 |
Humidity Sensor |
Vishay |
| 27 |
2N1803 |
Thyristor SCR 900V 1.6KA 3-Pin TO-83 |
New Jersey Semiconductor |
| 28 |
2N5014 |
Trans GP BJT NPN 900V 0.5A 3-Pin TO-39 |
New Jersey Semiconductor |
| 29 |
2N5088 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.050A Ic, 300 - 900 hFE |
Continental Device India Limited |
| 30 |
2SC3537 |
Class C, 900MHz 28V power transistor (This datasheet of NEM092081B-28 is also the datasheet of 2SC3537, see the Electrical Characteristics table) |
NEC |
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