| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0662.630HXLL |
LT-5 tm fast-acting fuse. Long lead (bulk) 100 pieces. Ampere rating .630, voltage rating 250, nominal resistance cold ohms 96. |
Littelfuse |
| 2 |
0662.630HXSL |
LT-5 tm fast-acting fuse. Short lead (bulk) 100 pieces. Ampere rating .630, voltage rating 250, Nominal resistance cold ohms 96. |
Littelfuse |
| 3 |
0662.630ZRLL |
LT-5 tm fast-acting fuse. Long lead (tape and reel) 750 pieces. Ampere rating .630, voltage rating 250, nominal resistance cold ohms 96. |
Littelfuse |
| 4 |
0912-25 |
25 W, 50 V, 960-1215 MHz common base transistor |
GHz Technology |
| 5 |
0912-25 |
Pulsed Power Avionics 960-1215 MHz (Si) |
Microsemi |
| 6 |
0912-45 |
45 W, 50 V, 960-1215 MHz common base transistor |
GHz Technology |
| 7 |
0912-45 |
Pulsed Power Avionics 960-1215 MHz (Si) |
Microsemi |
| 8 |
0912-7 |
7 W, 50 V, 960-1215 MHz common base transistor |
GHz Technology |
| 9 |
0912-7 |
Pulsed Power Avionics 960-1215 MHz (Si) |
Microsemi |
| 10 |
0912LD20 |
Pulsed Power Avionics 960-1215 MHz (Si) |
Microsemi |
| 11 |
1002MP |
Pulsed Power Avionics 960-1215 MHz (Si) |
Microsemi |
| 12 |
1004MP |
4 W, 35 V, 960-1215 MHz common base transistor |
GHz Technology |
| 13 |
1004MP |
Pulsed Power Avionics 960-1215 MHz (Si) |
Microsemi |
| 14 |
1011LD110A |
Pulsed Power Avionics 960-1215 MHz (Si) |
Microsemi |
| 15 |
1011LD110B |
Pulsed Power Avionics 960-1215 MHz (Si) |
Microsemi |
| 16 |
1015MP |
Pulsed Power Avionics 960-1215 MHz (Si) |
Microsemi |
| 17 |
10502 |
Pulsed Power Avionics 960-1215 MHz (Si) |
Microsemi |
| 18 |
1075MP |
Pulsed Power Avionics 960-1215 MHz (Si) |
Microsemi |
| 19 |
1090MP |
Pulsed Power Avionics 960-1215 MHz (Si) |
Microsemi |
| 20 |
1150MP |
Pulsed Power Avionics 960-1215 MHz (Si) |
Microsemi |
| 21 |
1N5915 |
1.5 W, silicon zener diode. Zener voltage 3.9V. Test current 96.1 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 22 |
1N5915A |
1.5 W, silicon zener diode. Zener voltage 3.9V. Test current 96.1 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 23 |
1N5915C |
1.5 W, silicon zener diode. Zener voltage 3.9V. Test current 96.1 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 24 |
1N5915D |
1.5 W, silicon zener diode. Zener voltage 3.9V. Test current 96.1 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 25 |
2322 662 96. . . |
PTC Thermistors For Degaussing, Dual, Mono And Double Mono Cased |
Vishay |
| 26 |
2N692 |
25A silicon controlled rectifier. Vrsom 960V. |
General Electric Solid State |
| 27 |
30KPA96 |
Diode TVS Single Uni-Dir 96V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 28 |
30KPA96A |
Diode TVS Single Uni-Dir 96V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 29 |
30KPA96C |
Diode TVS Single Bi-Dir 96V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 30 |
30KPA96CA |
Diode TVS Single Bi-Dir 96V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
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