No. |
Part Name |
Description |
Manufacturer |
1 |
100BGQ015 |
15V 100A Schottky Discrete Diode in a PowIRtab package |
International Rectifier |
2 |
100BGQ015J |
15V 100A Schottky Discrete Diode in a PowIRtab (Short) package |
International Rectifier |
3 |
100BGQ030 |
30V 100A Schottky Discrete Diode in a PowIRtab package |
International Rectifier |
4 |
100BGQ030J |
30V 100A Schottky Discrete Diode in a PowIRtab (Short) package |
International Rectifier |
5 |
100BGQ045 |
45V 100A Schottky Discrete Diode in a PowIRtab package |
International Rectifier |
6 |
100BGQ045J |
45V 100A Schottky Discrete Diode in a PowIRtab (Short) package |
International Rectifier |
7 |
100BGQ100 |
100V 100A Schottky Discrete Diode in a PowIRtab package |
International Rectifier |
8 |
100BGQ100J |
100V 100A Schottky Discrete Diode in a PowIRtab (Short) package |
International Rectifier |
9 |
150EBU02 |
200V 150A Ultra-Fast Discrete Diode in a PowIRtab package |
International Rectifier |
10 |
150EBU04 |
400V 150A Ultra-Fast Discrete Diode in a PowIRtab package |
International Rectifier |
11 |
175BGQ030 |
30V 175A Schottky Discrete Diode in a PowIRtab package |
International Rectifier |
12 |
175BGQ030J |
30V 175A Schottky Discrete Diode in a PowIRtab (Short) package |
International Rectifier |
13 |
175BGQ045 |
45V 175A Schottky Discrete Diode in a PowIRtab package |
International Rectifier |
14 |
175BGQ045J |
45V 175A Schottky Discrete Diode in a PowIRtab (Short) package |
International Rectifier |
15 |
2-2NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
16 |
2-3NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
17 |
2-4NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
18 |
2-5NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
19 |
2-6NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
20 |
2-7NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
21 |
24AA32A |
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C™ compatible 2-wire serial interface bus. The 24AA32A features a page-write capability of up to 32 bytes of data and is capable of both r |
Microchip |
22 |
24C04A |
The 24C04A is a 4K bit Serial Electrically Erasable PROM. The 24C04A features an I2C™ compatible 2-wire serial interface bus and hardware write protection for the upper half of the block. The 24C04A has a page write capabil |
Microchip |
23 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
24 |
2N6648 |
10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
25 |
2N6649 |
10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
26 |
2N6650 |
10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
27 |
2N6666 |
10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
28 |
2N6667 |
10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
29 |
2N6668 |
10 A P-N-P darlington power transistor. -80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
30 |
2NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
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