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Datasheets for A R

Datasheets found :: 344
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No. Part Name Description Manufacturer
1 1S310 Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
2 1S310H Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
3 1S311 Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
4 1S311H Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
5 1S312 Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
6 1S312H Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
7 1S313 Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
8 1S313H Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
9 1S314 Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
10 1S314H Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
11 1S315 Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
12 1S315H Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
13 2N6072 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
14 2N6072A Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
15 2N6072B Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
16 2N6073 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. Motorola
17 2N6074 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Motorola
18 2N6074A Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Motorola
19 2N6074B Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Motorola
20 2N6075 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. Motorola
21 5Z27 ZENER DIODE SILICON DIFFUSED JUNCTION POWER SURGE SUPPRESSOR designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over .voltage conditions. TOSHIBA
22 5Z30 ZENER DIODE SILICON DIFFUSED JUNCTION POWER SURGE SUPPRESSOR designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over .voltage conditions. TOSHIBA
23 AN1329 SELF-OSCILLATION SOLUTION FOR CFLS WITH A RESONANT DRIVING CIRCUIT SGS Thomson Microelectronics
24 AN1348 ST485: A RS-485 BASED INTERFACE WITH LOWER DATA BIT ERRORS SGS Thomson Microelectronics
25 AN857 TS912 - DRIVING A PIEZOELECTRIC CELL WITH A RAIL TO RAIL OP-AMPS SGS Thomson Microelectronics
26 AT91SAM7A3 The AT91SAM7A3 features a 54 MIPS ARM7TDMI processor with 256K bytes of high-speed Flash, 32K bytes of SRAM and a rich peripheral ... Atmel
27 ATSAM2193 The ATSAM2193 provides a single-chip, low-cost MIDI sound system. Equipped with a serial and a parallel MIDI input, it provides state-of-the-art sound synthesis using a full GM sound set together with a range of compatible effects. Its low Atmel
28 ATV6060 60W, 470-860MHz CLASS A RF Broadband Linear Power Amplifier Motorola
29 AZ4000V4 Analyzes applications created on a real-time OS (RX4000V4) NEC
30 BYQ28E SERIES Dual Ultrafast Soft Recovery Rectifiers Forward Current 10 A Reverse Recovery Time 20ns Vishay


Datasheets found :: 344
Page: | 1 | 2 | 3 | 4 | 5 |



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