No. |
Part Name |
Description |
Manufacturer |
1 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
2 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
3 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
4 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
5 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
6 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
7 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
8 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
9 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
10 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
11 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
12 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
13 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
14 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
15 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
16 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
17 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
18 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
19 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
20 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
21 |
5Z27 |
ZENER DIODE SILICON DIFFUSED JUNCTION POWER SURGE SUPPRESSOR designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over .voltage conditions. |
TOSHIBA |
22 |
5Z30 |
ZENER DIODE SILICON DIFFUSED JUNCTION POWER SURGE SUPPRESSOR designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over .voltage conditions. |
TOSHIBA |
23 |
AN1329 |
SELF-OSCILLATION SOLUTION FOR CFLS WITH A RESONANT DRIVING CIRCUIT |
SGS Thomson Microelectronics |
24 |
AN1348 |
ST485: A RS-485 BASED INTERFACE WITH LOWER DATA BIT ERRORS |
SGS Thomson Microelectronics |
25 |
AN857 |
TS912 - DRIVING A PIEZOELECTRIC CELL WITH A RAIL TO RAIL OP-AMPS |
SGS Thomson Microelectronics |
26 |
AT91SAM7A3 |
The AT91SAM7A3 features a 54 MIPS ARM7TDMI processor with 256K bytes of high-speed Flash, 32K bytes of SRAM and a rich peripheral ... |
Atmel |
27 |
ATSAM2193 |
The ATSAM2193 provides a single-chip, low-cost MIDI sound system. Equipped with a serial and a parallel MIDI input, it provides state-of-the-art sound synthesis using a full GM sound set together with a range of compatible effects. Its low |
Atmel |
28 |
ATV6060 |
60W, 470-860MHz CLASS A RF Broadband Linear Power Amplifier |
Motorola |
29 |
AZ4000V4 |
Analyzes applications created on a real-time OS (RX4000V4) |
NEC |
30 |
BYQ28E SERIES |
Dual Ultrafast Soft Recovery Rectifiers Forward Current 10 A Reverse Recovery Time 20ns |
Vishay |
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