| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 3 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 4 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 5 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 6 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 7 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 8 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 9 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 10 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 11 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 12 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 13 |
5Z27 |
ZENER DIODE SILICON DIFFUSED JUNCTION POWER SURGE SUPPRESSOR designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over .voltage conditions. |
TOSHIBA |
| 14 |
5Z30 |
ZENER DIODE SILICON DIFFUSED JUNCTION POWER SURGE SUPPRESSOR designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over .voltage conditions. |
TOSHIBA |
| 15 |
AN1329 |
SELF-OSCILLATION SOLUTION FOR CFLS WITH A RESONANT DRIVING CIRCUIT |
SGS Thomson Microelectronics |
| 16 |
AZ4000V4 |
Analyzes applications created on a real-time OS (RX4000V4) |
NEC |
| 17 |
BYQ28E SERIES |
Dual Ultrafast Soft Recovery Rectifiers Forward Current 10 A Reverse Recovery Time 20ns |
Vishay |
| 18 |
BYQ28EB SERIES |
Dual Ultrafast Soft Recovery Rectifiers Forward Current 10 A Reverse Recovery Time 20ns |
Vishay |
| 19 |
BYQ28EF SERIES |
Dual Ultrafast Soft Recovery Rectifiers Forward Current 10 A Reverse Recovery Time 20ns |
Vishay |
| 20 |
BZY83/D1 |
Silicon Zener Diode (forward operate) the anode is marked with a red dot |
Siemens |
| 21 |
HCS410/WM |
The HCS410/WM is a read/write transponder module in a small, tapered SOT-385 leadless wedge package. HCS410/WM utilizes Microchip’s patented KEELOQ® code hopping technology to create a robust dual-encryption key device that prov |
Microchip |
| 22 |
L494 |
VERY LOW DROP 1.5 A REGULATORS |
SGS Thomson Microelectronics |
| 23 |
L4940 |
VERY LOW DROP 1.5 A REGULATORS |
ST Microelectronics |
| 24 |
L4940-SERIES |
VERY LOW DROP 1.5 A REGULATORS |
SGS Thomson Microelectronics |
| 25 |
L4940D2T10 |
VERY LOW DROP 1.5 A REGULATORS |
SGS Thomson Microelectronics |
| 26 |
L4940D2T10 |
VERY LOW DROP 1.5 A REGULATORS |
ST Microelectronics |
| 27 |
L4940D2T10-TR |
VERY LOW DROP 1.5 A REGULATORS |
ST Microelectronics |
| 28 |
L4940D2T12 |
VERY LOW DROP 1.5 A REGULATORS |
SGS Thomson Microelectronics |
| 29 |
L4940D2T12 |
VERY LOW DROP 1.5 A REGULATORS |
ST Microelectronics |
| 30 |
L4940D2T12-TR |
VERY LOW DROP 1.5 A REGULATORS |
ST Microelectronics |
| | | |
