| No. |
Part Name |
Description |
Manufacturer |
| 1 |
277 |
Precision Isolation Amplifier High CMV/CMR,+-5V Floating |
Intronics |
| 2 |
277A |
Precision Isolation Amplifier High CMV/CMR,+-5V Floating |
Intronics |
| 3 |
277J |
Precision Isolation Amplifier High CMV/CMR,+-5V Floating |
Intronics |
| 4 |
277K |
Precision Isolation Amplifier High CMV/CMR,+-5V Floating |
Intronics |
| 5 |
2N5401 |
PNP Silicon Transistor (General purpose amplifier High voltage application) |
AUK Corp |
| 6 |
2N5551 |
NPN Silicon Transistor (General purpose amplifier High voltage application) |
AUK Corp |
| 7 |
2SB1031 |
SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER HIGH CURRENT SWITCHING |
Hitachi Semiconductor |
| 8 |
2SC815 |
LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLAR |
USHA India LTD |
| 9 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
| 10 |
2SD1435K |
SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER HIGH CURRENT SWITCHING |
Hitachi Semiconductor |
| 11 |
C1815 |
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR |
Unisonic Technologies |
| 12 |
CA2830 |
Thin Film RF Linear Hybrid Amplifier High Gain 34.5dB, 1W Output power at 28V |
TRW |
| 13 |
KSA910 |
PNP (DRIVER STAGE AUDIO AMPLIFIER HIGH VOLTAGE SWITCHING APPLICATIONS) |
Samsung Electronic |
| 14 |
KSC1623 |
NPN (LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSC) |
Samsung Electronic |
| 15 |
TOA4709 |
Operational amplifier High stability (µA709A), military temperature range |
Transitron Electronic |
| 16 |
TOA7709 |
Operational amplifier High impendance, Darlington input, military temperature range |
Transitron Electronic |
| 17 |
TOA8709 |
Operational amplifier High input impedance |
Transitron Electronic |
| 18 |
UTC2SC1815 |
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR |
Unisonic Technologies |
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