| No. |
Part Name |
Description |
Manufacturer |
| 1 |
12BH7-A |
The 12BH7-A is a miniature medium-mu twin troide designed primarily for use as a vertical-deflection amplifier in television receivers |
General Semiconductor |
| 2 |
1N5829 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 20V. Vrsm = 24V. |
USHA India LTD |
| 3 |
1N5830 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 30V. Vrsm = 36V. |
USHA India LTD |
| 4 |
1N5831 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 40V. Vrsm = 48V. |
USHA India LTD |
| 5 |
1N5832 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 20V. Vrsm = 24V. |
USHA India LTD |
| 6 |
1N5833 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 30V. Vrsm = 36V. |
USHA India LTD |
| 7 |
1N5834 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 40V. Vrsm = 48V. |
USHA India LTD |
| 8 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 9 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 10 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 11 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 12 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 13 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 15 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 16 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 17 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 18 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 19 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 20 |
1S80 |
Germanium Point Contact Diode, intended for use as a General Detector |
Hitachi Semiconductor |
| 21 |
24AA02 |
The 24AA02 is a 1K bit Electrically Erasable PROM memory organized as a single block of 256 x 8-bit memory with an I2C™ compatible 2-wire serial interface bus. The 24AA02 features hardware write protect, Schmitt trigger inp |
Microchip |
| 22 |
24AA02-I/MS |
The 24AA02 is a 1K bit Electrically Erasable PROM memory organized as a single block of 256 x 8-bit memory with an I2C™ ... |
Microchip |
| 23 |
24AA02-I/MSG |
The 24AA02 is a 1K bit Electrically Erasable PROM memory organized as a single block of 256 x 8-bit memory with an I2C™ ... |
Microchip |
| 24 |
24AA02-I/P |
The 24AA02 is a 1K bit Electrically Erasable PROM memory organized as a single block of 256 x 8-bit memory with an I2C™ ... |
Microchip |
| 25 |
24AA02-I/PG |
The 24AA02 is a 1K bit Electrically Erasable PROM memory organized as a single block of 256 x 8-bit memory with an I2C™ ... |
Microchip |
| 26 |
24AA02-I/SN |
The 24AA02 is a 1K bit Electrically Erasable PROM memory organized as a single block of 256 x 8-bit memory with an I2C™ ... |
Microchip |
| 27 |
24AA02-I/SNG |
The 24AA02 is a 1K bit Electrically Erasable PROM memory organized as a single block of 256 x 8-bit memory with an I2C™ ... |
Microchip |
| 28 |
24AA02-I/ST |
The 24AA02 is a 1K bit Electrically Erasable PROM memory organized as a single block of 256 x 8-bit memory with an I2C™ ... |
Microchip |
| 29 |
24AA02-I/STG |
The 24AA02 is a 1K bit Electrically Erasable PROM memory organized as a single block of 256 x 8-bit memory with an I2C™ ... |
Microchip |
| 30 |
24AA02/P |
The 24AA02 is a 1K bit Electrically Erasable PROM memory organized as a single block of 256 x 8-bit memory with an I2C™ ... |
Microchip |
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