| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 2 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 3 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 4 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 5 |
2SC154H |
Silicon NPN Triple Diffused LPT Transistor, intended for use in Wide Band Amplifier, High Voltage Switching |
Hitachi Semiconductor |
| 6 |
2SC2731 |
UHF TV TUNER FREQUENCY CONVERTER, LOCAL OSCILLATOR AND WIDE BAND AMPLIFIER |
Hitachi Semiconductor |
| 7 |
2SC4080 |
NPN Bipolar Transistor for HF/Wide Band Amplifiers |
ON Semiconductor |
| 8 |
2SC5543 |
Silicon NPN Epitaxial VHF / UHF wide band amplifier |
Hitachi Semiconductor |
| 9 |
2SC5544 |
Silicon NPN Epitaxial VHF / UHF wide band amplifier |
Hitachi Semiconductor |
| 10 |
2SC5545 |
Silicon NPN Epitaxial VHF / UHF wide band amplifier |
Hitachi Semiconductor |
| 11 |
2SC5555 |
Silicon NPN Epitaxial VHF / UHF wide band amplifier |
Hitachi Semiconductor |
| 12 |
2SK161 |
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications |
TOSHIBA |
| 13 |
2SK192A |
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications |
TOSHIBA |
| 14 |
2SK210 |
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications |
TOSHIBA |
| 15 |
2SK211 |
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications |
TOSHIBA |
| 16 |
2SK2854 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION |
TOSHIBA |
| 17 |
2SK2855 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION |
TOSHIBA |
| 18 |
2SK3077 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
| 19 |
2SK3077A |
Field Effect Transistor Silicon N Channel MOS Type VHF/UHF Band Amplifier Applications |
TOSHIBA |
| 20 |
2SK3078 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
| 21 |
2SK3078A |
Field Effect Transistor Silicon N Channel MOS Type VHF/UHF Band Amplifier Applications |
TOSHIBA |
| 22 |
2SK3079 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
| 23 |
2SK3079A |
Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier Applications |
TOSHIBA |
| 24 |
2SK881 |
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications |
TOSHIBA |
| 25 |
3SK28 |
Silicon N-Channel junction Field Effect Transistor, Video pre-amplifier or VHF band amplifier applications |
TOSHIBA |
| 26 |
ABI-04C |
Small Signal Narrow Band Amplifier |
CCSIT-CE |
| 27 |
ABI-04T |
Small Signal Narrow Band Amplifier |
CCSIT-CE |
| 28 |
ABI-09 |
Small Signal Narrow Band Amplifier |
CCSIT-CE |
| 29 |
ABI-2 |
Small Signal Narrow Band Amplifier |
CCSIT-CE |
| 30 |
BF921S |
Epitaxial planar NPN transistor, intended for use as preamplifier for surface wave TV IF filters and VHF-UHF wide band amplifier |
SGS-ATES |
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