| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N1613 |
Silicon NPN Transistor (identical to BFY67) |
COMPELEC |
| 2 |
2N1711 |
Silicon NPN Transistor (identical to BFY68) |
COMPELEC |
| 3 |
B581 |
Marking for UPB581 part number, A08 NEC package or UPB581B part number for BF08 NEC package |
NEC |
| 4 |
B582 |
Marking for UPB582 part number, A08 NEC package or UPB582B part number for BF08 NEC package |
NEC |
| 5 |
B584 |
Marking for UPB584B part number, BF08 NEC package |
NEC |
| 6 |
B585 |
Marking for UPB585B part number, BF08 NEC package |
NEC |
| 7 |
B586 |
Marking for UPB586B part number, BF08 NEC package |
NEC |
| 8 |
B587 |
Marking for UPB587B part number, BF08 NEC package |
NEC |
| 9 |
B588 |
Marking for UPB588B part number, BF08 NEC package |
NEC |
| 10 |
BF1211 |
BF1211; BF1211R; BF1211WR; N-channel dual-gate MOS-FETs |
Philips |
| 11 |
BF1211 |
BF1211; BF1211R; BF1211WR; N-channel dual-gate MOS-FETs |
Philips |
| 12 |
BF1211R |
BF1211; BF1211R; BF1211WR; N-channel dual-gate MOS-FETs |
Philips |
| 13 |
BF1211R |
BF1211; BF1211R; BF1211WR; N-channel dual-gate MOS-FETs |
Philips |
| 14 |
BF1211WR |
BF1211; BF1211R; BF1211WR; N-channel dual-gate MOS-FETs |
Philips |
| 15 |
BF1211WR |
BF1211; BF1211R; BF1211WR; N-channel dual-gate MOS-FETs |
Philips |
| 16 |
BF1212 |
BF1212; BF1212R; BF1212WR; N-channel dual-gate MOS-FETs |
Philips |
| 17 |
BF1212 |
BF1212; BF1212R; BF1212WR; N-channel dual-gate MOS-FETs |
Philips |
| 18 |
BF1212R |
BF1212; BF1212R; BF1212WR; N-channel dual-gate MOS-FETs |
Philips |
| 19 |
BF1212R |
BF1212; BF1212R; BF1212WR; N-channel dual-gate MOS-FETs |
Philips |
| 20 |
BF1212WR |
BF1212; BF1212R; BF1212WR; N-channel dual-gate MOS-FETs |
Philips |
| 21 |
BF1212WR |
BF1212; BF1212R; BF1212WR; N-channel dual-gate MOS-FETs |
Philips |
| 22 |
BF469 |
2.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF470 |
Continental Device India Limited |
| 23 |
BF470 |
2.000W Medium Power PNP Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF469 |
Continental Device India Limited |
| 24 |
BF471 |
2.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.030A Ic, 50 hFE. Complementary BF472 |
Continental Device India Limited |
| 25 |
BF472 |
2.000W Medium Power PNP Plastic Leaded Transistor. 300V Vceo, 0.030A Ic, 50 hFE. Complementary BF471 |
Continental Device India Limited |
| 26 |
BF820 |
0.250W High Voltage NPN SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF821 |
Continental Device India Limited |
| 27 |
BF821 |
0.250W High Voltage PNP SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF820 |
Continental Device India Limited |
| 28 |
BF822 |
0.250W High Voltage NPN SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF823 |
Continental Device India Limited |
| 29 |
BF823 |
0.250W High Voltage PNP SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF822 |
Continental Device India Limited |
| 30 |
BFQ24 |
PNP Silicon planar epitaxial transistor, intended for use in UHF and microwave, NPN complement is BFQ22S |
Philips |
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