| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BF1211 |
BF1211; BF1211R; BF1211WR; N-channel dual-gate MOS-FETs |
Philips |
| 2 |
BF1211 |
BF1211; BF1211R; BF1211WR; N-channel dual-gate MOS-FETs |
Philips |
| 3 |
BF1211R |
BF1211; BF1211R; BF1211WR; N-channel dual-gate MOS-FETs |
Philips |
| 4 |
BF1211R |
BF1211; BF1211R; BF1211WR; N-channel dual-gate MOS-FETs |
Philips |
| 5 |
BF1211WR |
BF1211; BF1211R; BF1211WR; N-channel dual-gate MOS-FETs |
Philips |
| 6 |
BF1211WR |
BF1211; BF1211R; BF1211WR; N-channel dual-gate MOS-FETs |
Philips |
| 7 |
BF1212 |
BF1212; BF1212R; BF1212WR; N-channel dual-gate MOS-FETs |
Philips |
| 8 |
BF1212 |
BF1212; BF1212R; BF1212WR; N-channel dual-gate MOS-FETs |
Philips |
| 9 |
BF1212R |
BF1212; BF1212R; BF1212WR; N-channel dual-gate MOS-FETs |
Philips |
| 10 |
BF1212R |
BF1212; BF1212R; BF1212WR; N-channel dual-gate MOS-FETs |
Philips |
| 11 |
BF1212WR |
BF1212; BF1212R; BF1212WR; N-channel dual-gate MOS-FETs |
Philips |
| 12 |
BF1212WR |
BF1212; BF1212R; BF1212WR; N-channel dual-gate MOS-FETs |
Philips |
| 13 |
BF469 |
2.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF470 |
Continental Device India Limited |
| 14 |
BF470 |
2.000W Medium Power PNP Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF469 |
Continental Device India Limited |
| 15 |
BF471 |
2.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.030A Ic, 50 hFE. Complementary BF472 |
Continental Device India Limited |
| 16 |
BF472 |
2.000W Medium Power PNP Plastic Leaded Transistor. 300V Vceo, 0.030A Ic, 50 hFE. Complementary BF471 |
Continental Device India Limited |
| 17 |
BF820 |
0.250W High Voltage NPN SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF821 |
Continental Device India Limited |
| 18 |
BF821 |
0.250W High Voltage PNP SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF820 |
Continental Device India Limited |
| 19 |
BF822 |
0.250W High Voltage NPN SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF823 |
Continental Device India Limited |
| 20 |
BF823 |
0.250W High Voltage PNP SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF822 |
Continental Device India Limited |
| 21 |
BFQ24 |
PNP Silicon planar epitaxial transistor, intended for use in UHF and microwave, NPN complement is BFQ22S |
Philips |
| 22 |
BFQ51 |
Silicon wideband PNP transistor, NPN complements are BFR90 and BFR90A |
Philips |
| 23 |
BFQ51 |
Silicon wideband PNP transistor, NPN complements are BFR90 and BFR90A |
Philips |
| 24 |
BFQ51C |
Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A |
Philips |
| 25 |
BFQ52 |
PNP silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFQ53 |
Philips |
| 26 |
BFQ53 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, PNP complement is BFQ52 |
Philips |
| 27 |
BGB420 |
Silicon MMICs - Mirror-Biased BFP 420 in SIEGET 25 Technology, Icmax = 30mA, SOT343 |
Infineon |
| 28 |
BGB540 |
Silicon MMICs - Mirror-Biased BFP540 in SIEGET 45 Technology, Icmax = 80mA, SOT343 |
Infineon |
| 29 |
BGC420 |
Self-Biased BFP420 |
Infineon |
| 30 |
HSP45102 |
Numerically Control Oscillator, 12-Bit, 40MHz, 32-Bit Frequency Control, BFSK/QPSK Modulation |
Intersil |
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