No. |
Part Name |
Description |
Manufacturer |
1 |
0608-020 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz |
SGS Thomson Microelectronics |
2 |
0608-070 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics |
SGS Thomson Microelectronics |
3 |
0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
4 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
5 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
6 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
7 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
8 |
1MB12-140 |
INSULATED GATE BIPOLAR TRANSISTOR |
Fuji Electric |
9 |
1MBH60-100 |
INSULATED GATE BIPOLAR TRANSISTOR |
Fuji Electric |
10 |
1MBH60D-090A |
IGBT INSULATED GATE BIPOLAR TRANSISTOR |
Fuji Electric |
11 |
2001 |
1 W, 28 V, 2000 MHz, microwave CW bipolar |
Acrian |
12 |
2001-2 |
1 W, 28 V, 2000 MHz, microwave CW bipolar |
Acrian |
13 |
2003 |
Microwave CW Bipolar / 3 Watts - 28 Colts / 2000 Mhz |
Acrian |
14 |
2003-2 |
3 W, 28 V, 2000 MHz, microwave CW bipolar |
Acrian |
15 |
2005 |
5 W, 28 V, 2000 MHz, microwave CW bipolar |
Acrian |
16 |
2010 |
10 W, 28 V, 2000 MHz, microwave CW bipolar |
Acrian |
17 |
2010-2 |
10 W, 28 V, 2000 MHz, microwave CW bipolar |
Acrian |
18 |
2010-3 |
10 W, 28 V, 2000 MHz, microwave CW bipolar |
Acrian |
19 |
2015M |
MICROWAVE BIPOLAR |
Acrian |
20 |
2015M-2 |
15 W, 28 V, 2000 MHz, microwave CW bipolar |
Acrian |
21 |
2223-14 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
22 |
2301 |
1.5 W, 20 V, 2.3 GHz, microwave CW bipolar |
Acrian |
23 |
2301-2 |
1.5 W, 20 V, 2.3 GHz, microwave CW bipolar |
Acrian |
24 |
2304 |
4 W, 20 V, 2.3 GHz, microwave CW bipolar |
Acrian |
25 |
2304-2 |
4 W, 20 V, 2.3 GHz, microwave CW bipolar |
Acrian |
26 |
2307 |
MICROWAVE CW BIPOLAR |
Acrian |
27 |
2307-2 |
7 W, 20 V, 2.3 GHz, microwave CW bipolar |
Acrian |
28 |
2910 |
10 MHz BIPOLAR LOGARITHMIC AMPLIFIER |
Optical Electronics Incorporated |
29 |
2920 |
20 MHz BIPOLAR LOGARITHMIC AMPLIFIER |
Optical Electronics Incorporated |
30 |
2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
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