No. |
Part Name |
Description |
Manufacturer |
1 |
-7L |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
2 |
-8 |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
3 |
-8L |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
4 |
1,25AND1,0625GBD,LC,2X5,E |
Transceivers by Form-factor MSA - Mulltimode 850nm -40C to 85C |
Infineon |
5 |
1,25GBIT/S,SC,1X9,3.3&5V |
Transceivers by Form-factor MSA - Product Type |
Infineon |
6 |
1.0625GBD,LC,2X5 |
Transceivers by Form-factor MSA - |
Infineon |
7 |
1.0625GBD,LC,2X5/2X10 |
Transceivers by Form-factor MSA - Single Mode 1300 nm, 2x5/2x10, LC Connector |
Infineon |
8 |
1.25GBIT/S,LC,SFP,3.3V |
Transceivers by Form-factor MSA - SFP - Multimode 850nm, VCSEL, 1.25GBit/s GBE, 1.0625 GBit/s FC, OC-48 Transceiver, LC |
Infineon |
9 |
1N542 |
Tungsten point contact germanium diode - detection, sold by matched pairs (2x1N542) |
SESCOSEM |
10 |
2,125AND1,0625GBD,LC,2X5 |
Transceivers by Form-factor MSA - Multimode 850nm VCSEL TRX |
Infineon |
11 |
2.125AND1.0625GBD,LC,SFP, |
Transceivers by Form-factor MSA - SFP - Multimode 850nm VCSEL; 2.125 and 1.0625 Gbit/s FC; 1.25 GBE TRX with LC-Connector |
Infineon |
12 |
24AA32A |
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C compatible 2-wire serial interface bus. The 24AA32A features a page-write capability of up to 32 bytes of data and is capable of both r |
Microchip |
13 |
28C256 |
5 Volt / Byte Alterable E2PROM |
Xicor |
14 |
28F008B3 |
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE, 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY |
Intel |
15 |
28F016B3 |
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE, 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY |
Intel |
16 |
28LV64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28LV64A is a 64K bit CMOS Parallel EEPROM organized as 8K words by 8 bits. The 28LV64A is accessed like a static RAM for the read or write cycle |
Microchip |
17 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
18 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
19 |
2N6553 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
20 |
2N6554 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
21 |
2N6555 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
22 |
2N6556 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
23 |
2SC2851 |
Transistors (Selection Guide by Applications and Functions) |
Panasonic |
24 |
2SC2988 |
Transistors (Selection Guide by Applications and Functions) |
Panasonic |
25 |
2SC4767 |
Transistors (Selection Guide by Applications and Functions) |
Panasonic |
26 |
2SC4893 |
Transistors (Selection Guide by Applications and Functions) |
Panasonic |
27 |
2SC5021 |
Transistors (Selection Guide by Applications and Functions) |
Panasonic |
28 |
2SD2328 |
TRANSISTORS(SELECTION GUIDE BY APPLICATIONS AND FUNCTIONS) |
Panasonic |
29 |
2SD2331 |
TRANSISTORS(SELECTION GUIDE BY APPLICATIONS AND FUNCTIONS) |
Panasonic |
30 |
2SD2333 |
TRANSISTORS(SELECTION GUIDE BY APPLICATIONS AND FUNCTIONS) |
Panasonic |
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