| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N7002KA |
N Channel MOSFET ESD Protected 2000V |
Korea Electronics (KEC) |
| 2 |
2N7002KU |
N Channel MOSFET ESD Protected 2000V |
Korea Electronics (KEC) |
| 3 |
2SK294 |
SILICON N CHANNEL MOSFET HIGH SPEED POWER SWITCHING |
Hitachi Semiconductor |
| 4 |
2SK295 |
SILICON N CHANNEL MOSFET HIGH SPEED POWER SWITCHING |
Hitachi Semiconductor |
| 5 |
4AK19 |
Silicon N Channel MOSFET High Speed Power Switching |
Hitachi Semiconductor |
| 6 |
BF2000 |
Silicon N Channel MOSFET Tetrode |
Siemens |
| 7 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 8 |
BF987 |
SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) |
Siemens |
| 9 |
BF994 |
Silicon N Channel MOSFET Tetrode (For VHF applications/ especially for input and mixer stages with a wide tuning range/ e.g. in CATV tuners) |
Siemens |
| 10 |
BF994S |
Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners) |
Siemens |
| 11 |
BF995 |
Silicon N Channel MOSFET Tetrode (For input and mixer stages in FM and VHF TV tuners) |
Siemens |
| 12 |
BF996S |
Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) |
Siemens |
| 13 |
BF997 |
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) |
Siemens |
| 14 |
BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 15 |
BF999 |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) |
Siemens |
| 16 |
H5N2509P |
SILICON N CHANNEL MOSFET SWITCHING |
Hitachi Semiconductor |
| 17 |
IRFG5110 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 18 |
IRFG5210 |
200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 19 |
IRFG6110 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 20 |
IRHG563110 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 21 |
IRHG567110 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 22 |
IRHG567110SCS |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 23 |
IRHG6110 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 24 |
IRHG6110SCS |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 25 |
IRHG63110 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 26 |
IRHQ563110 |
100V Dual 2N- and 2P- Channel MOSFET in a 28-pin LCC package |
International Rectifier |
| 27 |
IRHQ567110 |
100V Dual 2N- and 2P- Channel MOSFET in a 28-pin LCC package |
International Rectifier |
| 28 |
IRHQ567110SCS |
100V Dual 2N- and 2P- Channel MOSFET in a 28-pin LCC package |
International Rectifier |
| 29 |
IRHQ6110 |
100V Dual 2N- and 2P- Channel MOSFET in a 28-pin LCC package |
International Rectifier |
| 30 |
IRHQ6110SCS |
100V Dual 2N- and 2P- Channel MOSFET in a 28-pin LCC package |
International Rectifier |
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