No. |
Part Name |
Description |
Manufacturer |
1 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
2 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
3 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
4 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
5 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
6 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
7 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
8 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
9 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
10 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
11 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
12 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
13 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
14 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
15 |
1SV229 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
16 |
1SV239 |
Variable Capacitance Diode VCO for UHF Radio |
TOSHIBA |
17 |
1SV270 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
18 |
1SV276 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
19 |
1SV277 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
20 |
1SV279 |
Variable Capacitance Diode VCO for V/UHF Band Radio |
TOSHIBA |
21 |
1SV280 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
22 |
1SV281 |
Variable Capacitance Diode VCO for V/UHF Band Radio |
TOSHIBA |
23 |
1SV284 |
Variable Capacitance Diode VCO for V/UHF Band Radio |
TOSHIBA |
24 |
1SV285 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
25 |
1SV293 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
26 |
1SV304 |
Variable Capacitance Diode VCO for VHF Band Radio |
TOSHIBA |
27 |
1SV305 |
Variable Capacitance Diode VCO for VHF Band Radio |
TOSHIBA |
28 |
1SV306 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
29 |
BYX32-1000 |
Silicon Rectifier Diode VRRM 1000V normal polarity |
Philips |
30 |
BYX32-1000R |
Silicon Rectifier Diode VRRM 1000V reverse polarity |
Philips |
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