| No. |
Part Name |
Description |
Manufacturer |
| 1 |
10DF1 |
100V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
| 2 |
10DF1 |
Diode Switching 100V 1A 2-Pin DO-204AL |
New Jersey Semiconductor |
| 3 |
10DF12 |
Diode Switching 100V 1A 2-Pin DO-204AL |
New Jersey Semiconductor |
| 4 |
10DF1TR |
100V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
| 5 |
10DF2 |
200V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
| 6 |
10DF2 |
Diode Switching 200V 1A 2-Pin DO-204AL |
New Jersey Semiconductor |
| 7 |
10DF4 |
400V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
| 8 |
10DF4 |
Diode Switching 400V 1A 2-Pin DO-204AL |
New Jersey Semiconductor |
| 9 |
10DF6 |
600V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
| 10 |
10DF6 |
Diode Switching 600V 1A 2-Pin DO-204AL |
New Jersey Semiconductor |
| 11 |
10DF6TR |
600V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
| 12 |
10DF8 |
800V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
| 13 |
10DF8 |
Diode Switching 800V 1A 2-Pin DO-204AL |
New Jersey Semiconductor |
| 14 |
10DF8TR |
800V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
| 15 |
10SI05 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 50V |
IPRS Baneasa |
| 16 |
10SI05 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 50V |
IPRS Baneasa |
| 17 |
10SI05R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 50V |
IPRS Baneasa |
| 18 |
10SI05R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 50V |
IPRS Baneasa |
| 19 |
10SI1 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 100V |
IPRS Baneasa |
| 20 |
10SI1 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 100V |
IPRS Baneasa |
| 21 |
10SI10 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1000V |
IPRS Baneasa |
| 22 |
10SI10 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1000V |
IPRS Baneasa |
| 23 |
10SI10R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1000V |
IPRS Baneasa |
| 24 |
10SI10R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1000V |
IPRS Baneasa |
| 25 |
10SI12 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1200V |
IPRS Baneasa |
| 26 |
10SI12 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1200V |
IPRS Baneasa |
| 27 |
10SI12R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1200V |
IPRS Baneasa |
| 28 |
10SI12R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1200V |
IPRS Baneasa |
| 29 |
10SI1R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 100V |
IPRS Baneasa |
| 30 |
10SI1R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 100V |
IPRS Baneasa |
| | | |
