No. |
Part Name |
Description |
Manufacturer |
1 |
10DF1 |
100V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
2 |
10DF1 |
Diode Switching 100V 1A 2-Pin DO-204AL |
New Jersey Semiconductor |
3 |
10DF12 |
Diode Switching 100V 1A 2-Pin DO-204AL |
New Jersey Semiconductor |
4 |
10DF1TR |
100V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
5 |
10DF2 |
200V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
6 |
10DF2 |
Diode Switching 200V 1A 2-Pin DO-204AL |
New Jersey Semiconductor |
7 |
10DF4 |
400V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
8 |
10DF4 |
Diode Switching 400V 1A 2-Pin DO-204AL |
New Jersey Semiconductor |
9 |
10DF6 |
600V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
10 |
10DF6 |
Diode Switching 600V 1A 2-Pin DO-204AL |
New Jersey Semiconductor |
11 |
10DF6TR |
600V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
12 |
10DF8 |
800V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
13 |
10DF8 |
Diode Switching 800V 1A 2-Pin DO-204AL |
New Jersey Semiconductor |
14 |
10DF8TR |
800V 1A Ultra-Fast Discrete Diode in a DO-204AL package |
International Rectifier |
15 |
10SI05 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 50V |
IPRS Baneasa |
16 |
10SI05R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 50V |
IPRS Baneasa |
17 |
10SI1 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 100V |
IPRS Baneasa |
18 |
10SI10 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1000V |
IPRS Baneasa |
19 |
10SI10R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1000V |
IPRS Baneasa |
20 |
10SI12 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1200V |
IPRS Baneasa |
21 |
10SI12R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1200V |
IPRS Baneasa |
22 |
10SI1R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 100V |
IPRS Baneasa |
23 |
10SI2 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 200V |
IPRS Baneasa |
24 |
10SI2R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 200V |
IPRS Baneasa |
25 |
10SI3 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 300V |
IPRS Baneasa |
26 |
10SI3R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 300V |
IPRS Baneasa |
27 |
10SI4 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 400V |
IPRS Baneasa |
28 |
10SI4R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 400V |
IPRS Baneasa |
29 |
10SI5 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 500V |
IPRS Baneasa |
30 |
10SI5R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 500V |
IPRS Baneasa |
| | | |