| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4978US |
Diode Zener Single 68V 5% 5W 2-Pin E-MELF |
New Jersey Semiconductor |
| 2 |
1N4980US |
Diode Zener Single 82V 5% 5W 2-Pin E-MELF |
New Jersey Semiconductor |
| 3 |
1N4990US |
Diode Zener Single 220V 5% 5W 2-Pin E-MELF |
New Jersey Semiconductor |
| 4 |
1N4992US |
Diode Zener Single 270V 5% 5W 2-Pin E-MELF |
New Jersey Semiconductor |
| 5 |
1N4996US |
Diode Zener Single 390V 5% 5W 2-Pin E-MELF |
New Jersey Semiconductor |
| 6 |
20N03HL |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount |
Motorola |
| 7 |
2SB1318 |
Darlington Transistor BUILT-IN DUMPER DIODE AT E-C |
NEC |
| 8 |
2SD1579 |
Darlington transistor including a dumper diode at E-C |
NEC |
| 9 |
3970-TYPE |
1550 nm transmitter. Connector options: FC/APC bulkhead, tight key;SC/APC bulkhead; E-2000/APC bulkhead. |
Agere Systems |
| 10 |
AMC1100 |
4.25kVPEAK Isolated Amplifier for e-metering |
Texas Instruments |
| 11 |
AMR960-35HE |
Linear Power Amplifier 35W, 925-960MHz, 26Vcc, designed for Cellular Radio GSM, NMT, E-TACS, AMPS applications |
Motorola |
| 12 |
APPLICATION-NOTE |
hFE and noise figure deterioration caused by E-B junction breakdown in transistors |
NEC |
| 13 |
AQV210EAX |
PhotoMOS relay, GU (general use) E-type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
| 14 |
AQV210EHAX |
PhotoMOS relay, GU (general use) E-type, 1-channel (form A ) type. I/O isolation: reinforced 5,000 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
| 15 |
AQV214EAX |
PhotoMOS relay, GU (general use) E-type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 400V, load current 120 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
| 16 |
AQV214EHAX |
PhotoMOS relay, GU (general use) E-type, 1-channel (form A ) type. I/O isolation: reinforced 5,000 VAC. Output rating: load voltage 400V, load current 120 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
| 17 |
AQW210EH |
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. Through hole terminal. |
Matsushita Electric Works(Nais) |
| 18 |
AQW210EHA |
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. Surface-mount trminal. |
Matsushita Electric Works(Nais) |
| 19 |
AQW210EHAX |
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. Surface-mount trminal. Picked from the 1/2/3/4-pin side. |
Matsushita Electric Works(Nais) |
| 20 |
AQW210EHAZ |
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. Surface-mount trminal. Picked from the 5/6/7/8-pin side. |
Matsushita Electric Works(Nais) |
| 21 |
AQW214EH |
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Through hole terminal. |
Matsushita Electric Works(Nais) |
| 22 |
AQW214EHA |
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Surface-mount trminal. |
Matsushita Electric Works(Nais) |
| 23 |
AQW214EHAX |
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Surface-mount trminal. Picked from the 1/2/3/4-pin side. |
Matsushita Electric Works(Nais) |
| 24 |
AQW214EHAZ |
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Surface-mount trminal. Picked from the 5/6/7/8-pin side. |
Matsushita Electric Works(Nais) |
| 25 |
ATF-50189 |
ATF-50189 · Single Voltage E-pHEMT Low Noise +45 dBm OIP3 in SOT-89 package |
Agilent (Hewlett-Packard) |
| 26 |
ATF-501P8 |
ATF-501P8 · Single Voltage E-pHEMT Low Noise +45.5 dBm OIP3 in LPCC |
Agilent (Hewlett-Packard) |
| 27 |
ATF-511P8 |
ATF-511P8 · Single Voltage E-pHEMT Low Noise +41.7 dBm OIP3 in LPCC |
Agilent (Hewlett-Packard) |
| 28 |
ATF-52189 |
ATF-52189 · Single Voltage E-pHEMT Low Noise +42 dBm OIP3 in SOT-89 package |
Agilent (Hewlett-Packard) |
| 29 |
ATF-521P8 |
ATF-521P8 · Single Voltage E-pHEMT Low Noise +42 dBm OIP3 in LPCC |
Agilent (Hewlett-Packard) |
| 30 |
ATF-53189 |
ATF-53189 · Single Voltage E-pHEMT Low Noise +40 dBm OIP3 in SOT-89 package |
Agilent (Hewlett-Packard) |
| | | |
