| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1A302 |
High-Performance LED FM Video |
Mitel Semiconductor |
| 2 |
1N60 |
Germanium Point Contact for FM detector |
Hitachi Semiconductor |
| 3 |
1N60H |
Germanium Point Contact for Logical Circuit, Video, AM, FM Detector |
Hitachi Semiconductor |
| 4 |
1S1658 |
Silicon epitaxial planar variable capacitance diode, FM AFC applications |
TOSHIBA |
| 5 |
1SV101 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM TUNER APPLICATIONS |
TOSHIBA |
| 6 |
1SV103 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM RADIO BAND TUNING APPLICATIONS |
TOSHIBA |
| 7 |
1SV147 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM RADIO BAND TUNING APPLICATIONS |
TOSHIBA |
| 8 |
1SV160 |
Variable Capacitance Diode AFC Application for FM Receiver |
TOSHIBA |
| 9 |
1SV225 |
Variable Capacitance Diode Electronic Tuning Applications of FM Receivers |
TOSHIBA |
| 10 |
1SV228 |
Variable Capacitance Diode Electronic Tuning Applications of FM Receivers |
TOSHIBA |
| 11 |
2-OA90A |
Germanium Point Contact Type - Video Detector - FM-AM Detector |
Panasonic |
| 12 |
2-OA99 |
Germanium Point Contact Type - FM-AM Detector General Use |
Panasonic |
| 13 |
2-OA99A |
Germanium Point Contact Type - FM-AM Detector General Use |
Panasonic |
| 14 |
2N3291 |
NPN silicon transistor for TV and FM mixer, RF and IF amplifier |
Motorola |
| 15 |
2N3292 |
NPN silicon transistor for TV and FM mixer, RF and IF amplifier |
Motorola |
| 16 |
2N3293 |
NPN silicon transistor for TV and FM mixer, RF and IF amplifier |
Motorola |
| 17 |
2N3294 |
NPN silicon transistor for TV and FM mixer, RF and IF amplifier |
Motorola |
| 18 |
2N3323 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
| 19 |
2N3324 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
| 20 |
2N3325 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
| 21 |
2N6080 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 22 |
2N6081 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 23 |
2N6083 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 24 |
2N6084 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 25 |
2SA1815 |
PNP Epitaxial Planar Silicon Transistor FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier Applications |
SANYO |
| 26 |
2SA1857 |
PNP Epitaxial Planar Silicon Transistor FM, RF, MIX, IF Amplifier High-Frequency General-Purpose Amplifier Applications |
SANYO |
| 27 |
2SA234 |
Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter |
Hitachi Semiconductor |
| 28 |
2SA235 |
Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 29 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 30 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
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