No. |
Part Name |
Description |
Manufacturer |
1 |
1002M |
Low level Class C transistor designed for avionics driver applications |
SGS Thomson Microelectronics |
2 |
1002MP |
Low level Class C transistor designed for avionics driver applications |
SGS Thomson Microelectronics |
3 |
12CWQ10G |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
4 |
12CWQ10GPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
5 |
12CWQ10GTR |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
6 |
12CWQ10GTRL |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
7 |
12CWQ10GTRLPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
8 |
12CWQ10GTRPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
9 |
12CWQ10GTRR |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
10 |
12CWQ10GTRRPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
11 |
1837 |
2.3GHz 2W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
12 |
1838 |
2.3GHz 3W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
13 |
1N34A |
Germanium Point Contact for AM detector |
Hitachi Semiconductor |
14 |
1N34AH |
Germanium Point Contact for AM detector or logical circuit |
Hitachi Semiconductor |
15 |
1N4001A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
16 |
1N4002A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
17 |
1N4003A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
18 |
1N4004A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
19 |
1N4005A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
20 |
1N4006A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
21 |
1N4007A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
22 |
1N5711WS-7 |
70V; 15mA surface mount schottky barrier diode. Ideally suited for automatic insertion |
Diodes |
23 |
2N1008 |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
24 |
2N1008A |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
25 |
2N1008B |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
26 |
2N1024 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
27 |
2N1025 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
28 |
2N1026 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
29 |
2N1027 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
30 |
2N1028 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
| | | |