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Datasheets for FOR P

Datasheets found :: 4090
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No. Part Name Description Manufacturer
1 01BZA8 DIODES (DIODES FOR PROTECTING AGAINST ESD) TOSHIBA
2 01BZA8.2 Diodes for Protecting Against ESD TOSHIBA
3 01ZA8 DIODES( DIODES FOR PROTECTING AGAINST ESD) TOSHIBA
4 01ZA8.2 Diodes for Protecting Against ESD TOSHIBA
5 01ZAB8.2 DIODES( DIODES FOR PROTECTING AGAINST ESD) TOSHIBA
6 0608-020 Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz SGS Thomson Microelectronics
7 0608-070 Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics SGS Thomson Microelectronics
8 1474 Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz SGS Thomson Microelectronics
9 1DI200Z-100 Power transistor module for power switching, AC and DC motor controls COLLMER SEMICONDUCTOR INC
10 1DI200Z-120 Power transistor module for power switching, AC and DC motor controls COLLMER SEMICONDUCTOR INC
11 1DI300Z-100 Power transistor module for power switching, AC and DC motor controls COLLMER SEMICONDUCTOR INC
12 1DI300Z-120 Power transistor module for power switching, AC and DC motor controls COLLMER SEMICONDUCTOR INC
13 1S310 Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
14 1S310H Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
15 1S311 Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
16 1S311H Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
17 1S312 Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
18 1S312H Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
19 1S313 Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
20 1S313H Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
21 1S314 Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
22 1S314H Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
23 1S315 Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
24 1S315H Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
25 1SVR405661R0000 Accessories for pluggable interface relays CR-U Pluggable function modules ABB
26 1SVR405662R0000 Accessories for pluggable interface relays CR-U Pluggable function modules ABB
27 1SVR405662R1000 Accessories for pluggable interface relays CR-U Pluggable function modules ABB
28 1SVR405663R0000 Accessories for pluggable interface relays CR-U Pluggable function modules ABB
29 1SVR405663R1000 Accessories for pluggable interface relays CR-U Pluggable function modules ABB
30 1SVR405664R0000 Accessories for pluggable interface relays CR-U Pluggable function modules ABB


Datasheets found :: 4090
Page: | 1 | 2 | 3 | 4 | 5 |



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